Zobrazeno 1 - 8
of 8
pro vyhledávání: '"N. E. Demidova"'
Publikováno v:
Physics of the Solid State. 63:449-452
The data on the EPR, photoluminescence (PL), and current transfer in porous silicon (PS) on KDB-0.3 and KES-0.01 Si, which was oxidized by 10-min isochronous thermal annealing in air at temperatures Tann from 20 to 900°C, as well as in HNO3, are pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aca3f8c74c4e6b07e78b1d6e0bacd98
https://doi.org/10.1134/s1063783421030057
https://doi.org/10.1134/s1063783421030057
Publikováno v:
Physics of the Solid State. 61:285-287
Porous silicon is formed using pulsed current with a pulse modulation varied in a range spanning five orders of magnitude, starting from a hundredth of a second, in order to achieve modulation of the properties of PS on the nanoscale. The PS is chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80d23070b6befe5e819939ab3fa8435
https://doi.org/10.1134/s1063783419030107
https://doi.org/10.1134/s1063783419030107
Publikováno v:
Physics of the Solid State. 59:251-253
We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80854f8d40d17f11f7faa3d5daf4b454
https://doi.org/10.1134/s1063783417020044
https://doi.org/10.1134/s1063783417020044
Autor:
Alexey Belov, D. A. Pavlov, A. I. Bobrov, Yu. I. Chigirinskii, N. E. Demidova, O. N. Gorshkov, M. V. Karzanova, Alexey Mikhaylov, David Tetelbaum, D. S. Korolev, E. S. Demidov
Publikováno v:
Physics of the Solid State. 56:631-634
Using transmission electron microscopy and elemental analysis, it has been shown that tungsten telluride glass (TTG) containing erbium and ytterbium as impurities penetrates into pores of porous silicon (PS) when melted in vacuum at 500°C. It has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869c3347d0ab4fe107ee03b195557617
https://doi.org/10.1134/s1063783414030093
https://doi.org/10.1134/s1063783414030093
Autor:
N. E. Demidova, E. S. Demidov, Alexey Belov, Yu. I. Chigirinskii, David Tetelbaum, E. A. Evropeitsev, A. N. Shushunov, O. N. Gorshkov, Alexey Mikhaylov, M. V. Karzanova
Publikováno v:
Physics of the Solid State. 53:2415-2420
It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 nm) by an order of magnitude in the case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605a6627de8e702e92e9f2317561b3a9
https://doi.org/10.1134/s1063783411120067
https://doi.org/10.1134/s1063783411120067
Publikováno v:
Physics of the Solid State. 51:2007-2013
Experimental data obtained in the study of transverse current transport in a number of nanosized grained or similar media, such as porous silicon layers, anodic silicon oxide layers, and silicon nitride layers prepared by ion implantation of nitrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f1cc0ed59e6adbc802a3e3eb8c45c2
https://doi.org/10.1134/s1063783409100035
https://doi.org/10.1134/s1063783409100035
Autor:
M. V. Stepikhova, V. V. Karzanov, I. S. Rassolova, M. O. Marychev, N. E. Demidova, A. M. Sharonov, O. N. Gorshkov, E. S. Demidov
Publikováno v:
Physics of the Solid State. 49:532-535
The possible formation of chromium-doped erbium silicate Er2SiO5: Cr in thin layers of porous silicon is demonstrated. This paper reports on studies of the photoluminescence, electron paramagnetic resonance, and transverse current transport in porous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e58b5f3a9445a7f0300831d079baf05
https://doi.org/10.1134/s1063783407030286
https://doi.org/10.1134/s1063783407030286
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 75:556-558
Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e8bd092990bacb09c6111f1c7505ba
https://doi.org/10.1134/1.1500720
https://doi.org/10.1134/1.1500720