Výsledky vyhledávání - "N. E. Demidova"

The EPR and Luminescence of Porous Silicon

Autor: N. E. Demidova, V. V. Karzanov, E. S. Demidov

Publikováno v: Physics of the Solid State. 63:449-452

The data on the EPR, photoluminescence (PL), and current transfer in porous silicon (PS) on KDB-0.3 and KES-0.01 Si, which was oxidized by 10-min isochronous thermal annealing in air at temperatures Tann from 20 to 900°C, as well as in HNO3, are pre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0aca3f8c74c4e6b07e78b1d6e0bacd98
https://doi.org/10.1134/s1063783421030057

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Electrochemical 'Resonance' of Photoluminescence for Porous Silicon Formed Using Pulsed Current Anodization

Autor: N. E. Demidova, A. S. Abrosimov, E. S. Demidov, V. V. Karzanov

Publikováno v: Physics of the Solid State. 61:285-287

Porous silicon is formed using pulsed current with a pulse modulation varied in a range spanning five orders of magnitude, starting from a hundredth of a second, in order to achieve modulation of the properties of PS on the nanoscale. The PS is chara

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e80d23070b6befe5e819939ab3fa8435
https://doi.org/10.1134/s1063783419030107

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Effect of the parameters of pulsed anodic formation of porous silicon on its luminescent, paramagnetic, and electrotransport properties

Autor: N. E. Demidova, A. S. Abrosimov, E. S. Demidov, V. V. Karzanov

Publikováno v: Physics of the Solid State. 59:251-253

We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::80854f8d40d17f11f7faa3d5daf4b454
https://doi.org/10.1134/s1063783417020044

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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

Autor: Alexey Belov, D. A. Pavlov, A. I. Bobrov, Yu. I. Chigirinskii, N. E. Demidova, O. N. Gorshkov, M. V. Karzanova, Alexey Mikhaylov, David Tetelbaum, D. S. Korolev, E. S. Demidov

Publikováno v: Physics of the Solid State. 56:631-634

Using transmission electron microscopy and elemental analysis, it has been shown that tungsten telluride glass (TTG) containing erbium and ytterbium as impurities penetrates into pores of porous silicon (PS) when melted in vacuum at 500°C. It has be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::869c3347d0ab4fe107ee03b195557617
https://doi.org/10.1134/s1063783414030093

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Discrete tunneling in electronic transport properties of nanograined porous silicon and similar heterophase systems

Autor: V. V. Sdobnyakov, V. V. Karzanov, N. E. Demidova, K. A. Markov, E. S. Demidov

Publikováno v: Physics of the Solid State. 51:2007-2013

Experimental data obtained in the study of transverse current transport in a number of nanosized grained or similar media, such as porous silicon layers, anodic silicon oxide layers, and silicon nitride layers prepared by ion implantation of nitrogen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57f1cc0ed59e6adbc802a3e3eb8c45c2
https://doi.org/10.1134/s1063783409100035

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Properties of erbium silicate doped with chromium in porous silicon

Autor: M. V. Stepikhova, V. V. Karzanov, I. S. Rassolova, M. O. Marychev, N. E. Demidova, A. M. Sharonov, O. N. Gorshkov, E. S. Demidov

Publikováno v: Physics of the Solid State. 49:532-535

The possible formation of chromium-doped erbium silicate Er2SiO5: Cr in thin layers of porous silicon is demonstrated. This paper reports on studies of the photoluminescence, electron paramagnetic resonance, and transverse current transport in porous

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e58b5f3a9445a7f0300831d079baf05
https://doi.org/10.1134/s1063783407030286

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Excess noise peaks in porous silicon-based diode structures

Autor: N. E. Demidova, V. V. Karzanov, E. S. Demidov, V. N. Shabanov

Publikováno v: Journal of Experimental and Theoretical Physics Letters. 75:556-558

Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer forme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3e8bd092990bacb09c6111f1c7505ba
https://doi.org/10.1134/1.1500720

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