Zobrazeno 1 - 6
of 6
pro vyhledávání: '"N. D. Savchenko"'
Publikováno v:
Sensor Electronics and Microsystem Technologies. 4:21-25
Publikováno v:
Surface and Interface Analysis. 38:448-451
We present experimental data on Auger analysis of the amorphous Ge33As12Se55 filmp-Si crystal heterojunction. The investigated depth profiles of the chemical components at the interface for the heterojunction revealed the presence of GeO2 and As2O3 f
Autor:
N. D. Savchenko
Publikováno v:
Soviet Geography. 20:297-304
The study of commuting links in rural areas of the Non-Chernozem Zone offers a useful approach to the redesign of settlement patterns. Commuting to work is analyzed in 80 primary settlement systems (farm systems) in five rayons of Vologda Oblast. Mos
Publikováno v:
Soviet Physics Journal. 12:1125-1128
A technique for synthesizing AsxSb1-xSI is described. The system is shown to form crystals of a limited solid solution. In the region in which a solid solution is formed, the crystals are ferroelectric photoconductors. An arsenic admixture reduces th
Publikováno v:
Chemischer Informationsdienst. 8
Autor:
N. D. Savchenko, V. P. Tsvetkov
Publikováno v:
Chemical Bonds in Solids ISBN: 9781468416886
K spectra of silicon were obtained in pure silicon, CrSi, and CrSi2. The identity of \( {{K}_{{{\beta}_{X}}}} \) of silicon in pure silicon, CrSi, and CrSi2 can be assumed from a comparison of \( {{K}_{{{\beta}_{X}}}} \) of pure silicon and chromium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a0da9081dd160f710df9efd5eb990a
https://doi.org/10.1007/978-1-4684-1686-2_12
https://doi.org/10.1007/978-1-4684-1686-2_12