Zobrazeno 1 - 10
of 26
pro vyhledávání: '"N. D. Rizzo"'
Autor:
T. Andre, F. B. Mancoff, Kerry Joseph Nagel, N. D. Rizzo, H.-J. Chia, Jon M. Slaughter, Sarin A. Deshpande, Sanjeev Aggarwal, M. DeHerrera, Jijun Sun, Dimitri Houssameddine, Michael L. Schneider, J. Janesky, Syed M. Alam, Renu Whig
Publikováno v:
IEEE Transactions on Magnetics. 49:4441-4446
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to be a fast, high density, nonvolatile memory that can enhance the performance of a variety of applications, particularly when used as a non-volatile buffer in data st
Autor:
Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky
Publikováno v:
IEEE Transactions on Magnetics. 41:132-136
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size o
Autor:
Brian R. Butcher, Mark F. Deherrera, Johan Åkerman, Jon M. Slaughter, M. Durlam, Gregory W. Grynkewich, Renu W. Dave, J. J. Sun, Srinivas V. Pietambaram, Bradley N. Engel, N. D. Rizzo, Saied N. Tehrani, Jason Allen Janesky, P. Brown, Kenneth H. Smith
Publikováno v:
Scopus-Elsevier
Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities n
Publikováno v:
IEEE Transactions on Magnetics. 36:159-165
We used a wide-field Kerr microscope to measure magnetization reversal in high coercivity thin film media that were subjected to nanosecond field pulses. Coplanar waveguides were used as a field source. Two different samples of CoCr/sub 10/Ta/sub 4/
Publikováno v:
Applied Surface Science. :575-579
Scanning tunneling microscopy and spectroscopy are employed in order to map with nanometer resolution the local quasi-particle density of states in superconducting proximity structures. Our experimental configuration is unique, in that the tunneling
Publikováno v:
Physical Review B. 58:15128-15134
Scanning tunneling microscopy and spectroscopy are employed in studies of the proximity effect between normal metals and superconductors. The experimental configuration is unique, in that the tunneling current flows in parallel to the interfaces betw
Publikováno v:
Acta Physica Polonica A. 93:425-430
Scanning tunneling microscopy and spectroscopy were applied to study the proximity effect with nanometer spatial resolution. The measurements were conducted on novel superconducting wires, which consist of an ordered array of submicron diameter norma
Autor:
J. Q. Wang, Xinsheng Sean Ling, B. A. Zeitlin, N. D. Rizzo, S.T. Hess, L. R. Motowidlo, J.D. McCambridge, Daniel E. Prober
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 7:1134-1137
We made thin film multilayers of Nb/sub 0.37/Ti/sub 0.63//Nb and Nb/sub 0.37/Ti/sub 0.63//Ti (d/sub NiTi/=14-27 nm and d/sub N/=4-11 nm) to examine geometries and materials relevant to flux pinning in commercial NbTi conductors. Samples were characte
Flux pinning in multifilamentary superconducting wires with ferromagnetic artificial pinning centers
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 7:1130-1133
We demonstrate that ferromagnets are effective artificial pinning centers for the enhancement of critical current (J/sub c/) in multifilamentary superconducting wires. We have analyzed theoretically the proximity effect due to the FM pins near the fi
Publikováno v:
Nature. 437:393-395
Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal or high-frequency