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pro vyhledávání: '"N. D. Beylin"'
Autor:
Larisa V. Arapkina, S. S. Gizha, V. P. Kalinushkin, Mikhail S. Storozhevykh, V. A. Chapnin, V. M. Senkov, N. D. Beylin, Oleg V. Uvarov, I. V. Pirshin, K. V. Chizh, Vladimir A. Yuryev
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:734-737
The morphology of low-temperature (growth temperature 360 °C) multilayer Ge/Si heterostructures with Ge quantum dots was investigated by means of transmitting electron microscopy, scanning tunneling microscopy and X-ray optics. The possibility to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0041b8c52f394dfd91f77bb57d6e50
https://doi.org/10.1166/jno.2014.1673
https://doi.org/10.1166/jno.2014.1673
