Zobrazeno 1 - 10
of 34
pro vyhledávání: '"N. Curmei"'
Autor:
V. Pakštas, G. Grincienė, A. Selskis, S. Balakauskas, M. Talaikis, L. Bruc, N. Curmei, G. Niaura, M. Franckevičius
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Improving the performance of kesterite solar cells requires high-quality, defect-free CZTS(Se) films with a reduced number of secondary phases and impurities. Post-annealing of the CZTS films at high temperatures in a sulfur or selenium atmo
Externí odkaz:
https://doaj.org/article/8e0de3871dc9405a9655e4ea331fbe69
Autor:
Gvidona P. Shevchenko, Yuliya V. Bokshyts, Catherine A. Kovel, Nadzeya V. Shynkevich, Alexander V. Mazanik, Dormidont A. Serban, Nicolai N. Curmei, Leonid I. Bruk, Piotr P. Pershukevich
Publikováno v:
Журнал Белорусского государственного университета: Химия, Iss 1, Pp 50-57 (2021)
The effect of Al2O3 – CuI oxide films on the photoelectric parameters of silicon solar cells (SCs) has been studied. The largest increase in the external quantum efficiency of photoelectric conversion of SCs in the near UV range is observed for mon
Externí odkaz:
https://doaj.org/article/be263a5d467844a0b5872117dfa0bb38
Autor:
T. Bezrodna, V. Nesprava, V. Melnyk, G. Klishevich, N. Curmei, T. Gavrilko, O. Roshchin, J. Baran, M. Drozd
Publikováno v:
Low Temperature Physics. 49:302-309
The 4-pentyl-4′-cyanobiphenyl (5CB) molecule conformation and structure alignment have been investigated by means of temperature variable Fourier transform infrared (FTIR) and photoluminescence (PL) spectroscopy in a wide temperature range (from
Autor:
T. Bezrodna, G. Klishevich, V. Melnyk, M. Nesprava, O. Roshchin, N. Curmei, J. Baran, M. Drozd
Publikováno v:
Molecular Crystals and Liquid Crystals. 747:56-63
Publikováno v:
Surface Engineering and Applied Electrochemistry. 57:323-329
Cu2ZnSnSe4 (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caus
Autor:
D. Serban, M. Caraman, A. V. Simashkevich, Gvidona P. Shevchenko, Yu. V. Bokshyts, N. Curmei, I. Dementiev, L. Bruc, T. Goglidze
Publikováno v:
Surface Engineering and Applied Electrochemistry. 57:315-322
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a
Autor:
M. Caraman, N. Curmei, L. Bruc, D. Serban, T. Goglidze, A. V. Simashkevich, Annett Thøgersen, I. Dementiev, Iu. Bokshitz, G. Shevchenko, Alexander Ulyashin
Publikováno v:
2020 International Semiconductor Conference (CAS).
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus the formation by this method of the thin layers SiO x with a thickness of about ~1nm is demonstrated, which allows obtainin
Autor:
Th. Dittrich, D.A. Sherban, Susan Schorr, A. V. Simashkevich, L. Dermenji, Ernest Arushanov, N. Curmei, Galina Gurieva, Jörg Rappich, L. Bruc, Maxim Guc
Publikováno v:
Thin Solid Films
The recent investigation of kesterite type quaternary compounds showed that one of the main detrimental problems, which limits the efficiency of the solar cells based on these materials, is related to the high defect concentrations, mainly Cu-Zn diso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df5df8b24e4057f2c45b79076d10ff8
https://zenodo.org/record/7628515
https://zenodo.org/record/7628515
Autor:
Marin Rusu, L. Dermenji, Ernest Arushanov, V. Fedorov, A. V. Simashkevich, Susan Schorr, Maxim Guc, D.A. Sherban, L. Bruc, Galina Gurieva, N. Curmei
Publikováno v:
Surface Engineering and Applied Electrochemistry. 52:509-514
The spray pyrolysis was used for the deposition of Cu2ZnSn(S, Se)4 (CZTSSe) kesterite thin films. The basic spray pyrolysis solution was prepared from two precursor solutions containing thiourea and cooled to a temperature near 1°C, which leads to m
Publikováno v:
Surface Engineering and Applied Electrochemistry. 52:284-288
Structures ITO/SiO х /n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as ph