Zobrazeno 1 - 10
of 69
pro vyhledávání: '"N. Coudurier"'
Akademický článek
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Autor:
K. Dabertrand, Patrice Gergaud, Magali Gregoire, Ph. Rodriguez, Quentin Rafhay, F. Boyer, N. Coudurier, Fabrice Nemouchi, Christophe Jany
Publikováno v:
IEEE Transactions on Electron Devices. 67:2495-2502
Titanium-based contacts are envisioned for the integration of III–V device contacts on a 300-mm platform, such as photodetectors, semiconductor optical amplifiers (SOAs), and III–V silicon hybrid lasers. For the first time, the impact of the ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ec1efce21896c177966e1fcb606cf5c
https://doi.org/10.1109/ted.2020.2985766
https://doi.org/10.1109/ted.2020.2985766
Autor:
S. Minoret, R. Famulok, Ph. Rodriguez, Christophe Jany, Patrice Gergaud, F. Boyer, N. Coudurier
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. Ni 2 P layers, obtained by magnetron sputtering of a Ni 2 P target, were implemented and integrated on III-V-bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9e374313b7bd98dd601a181c412815
https://doi.org/10.23919/iwjt52818.2021.9609464
https://doi.org/10.23919/iwjt52818.2021.9609464
Autor:
Christophe Licitra, N. Coudurier, Denis Mariolle, Flore Boyer, Nicolas Chevalier, Laura Toseli, Philippe Rodriguez, Bernard Pelissier
Publikováno v:
ECS Transactions. 92:73-83
Obtaining a competitive III-V laser made with a CMOS-compatible process is a major issue in the framework of Silicon photonics. The choice of the material used to elaborate an ohmic contact for III-V substrate is quite limited and fabrication process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9144c3620139bd372870e3b07734cfdc
https://doi.org/10.1149/09202.0073ecst
https://doi.org/10.1149/09202.0073ecst
Autor:
Magali Gregoire, N. Coudurier, Fabrice Nemouchi, K. Dabertrand, Christophe Jany, Patrice Gergaud, F. Boyer, Ph. Rodriguez, Quentin Rafhay
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Nickel-based metallization are envisioned for the p-contact integration of III-V / silicon hybrid lasers on a 300 mm platform. The electrical and physical characteristics of Ni 0.9 Pt 0.1 and Ni thin films on In 0.53 Ga 0.47 As layers have been studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e10409015ace276e167b6879309cc26
https://doi.org/10.1109/iitc47697.2020.9515625
https://doi.org/10.1109/iitc47697.2020.9515625
Akademický článek
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Autor:
Roman Reboud, Raphaël Boichot, Sabine Lay, Michel Pons, Thierry Encinas, Alexandre Crisci, Stéphane Coindeau, Mikhail Chubarov, Frédéric Mercier, Elisabeth Blanquet, N. Coudurier
Publikováno v:
Crystal Research and Technology. 51:231-238
Boron Nitride is a promising group 13-group 15 compound material that exhibits various interesting properties like wide band gap, chemical stability, attractive mechanical properties and other. The growth behavior of this material has not been invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2298374bf5220575eb536541110fbb
https://doi.org/10.1002/crat.201500284
https://doi.org/10.1002/crat.201500284
Autor:
Fabrice Nemouchi, Philippe Rodriguez, N. Coudurier, Christophe Jany, S. Zhiou, Salma bensalem, Bertrand Szelag, F. Boyer, E. Ghegin, Patrice Gergaud, Laura Toselli
Publikováno v:
Japanese Journal of Applied Physics. 59:SL0801
In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III–V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50ef3d383a1e9d2f3888c3877250a8a
https://doi.org/10.35848/1347-4065/ab7f1e
https://doi.org/10.35848/1347-4065/ab7f1e
Autor:
A. Claudel, Sabine Lay, Raphaël Boichot, Stéphane Coindeau, Michel Pons, Alexandre Crisci, Elisabeth Blanquet, Frédéric Mercier, N. Coudurier
Publikováno v:
Surface and Coatings Technology
Surface and Coatings Technology, Elsevier, 2013, 237, pp.118-125. ⟨10.1134/s1063783413100211⟩
Surface and Coatings Technology, Elsevier, 2013, 237, pp.118-125. ⟨10.1134/s1063783413100211⟩
International audience; AlN is epitaxially grown on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy (HT-HVPE) at constant growth rate and thickness, while varying the N/Al ratio in the gas phase at 1500 °C. The influence of an addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba0cd5481f2b8384e656270bf6be2348
https://doi.org/10.1016/j.surfcoat.2013.08.016
https://doi.org/10.1016/j.surfcoat.2013.08.016
Autor:
Roman Reboud, Elisabeth Blanquet, Frédéric Mercier, N. Coudurier, Raphaël Boichot, Sabine Lay, Michel Pons
Publikováno v:
Physics Procedia
Physics Procedia, Elsevier, 2013, 46, pp.102-106. ⟨10.1016/j.phpro.2013.07.050⟩
Physics Procedia, Elsevier, 2013, 46, pp.102-106. ⟨10.1016/j.phpro.2013.07.050⟩
International audience; One mu m-thick (0001) t-BN layers have been grown on w-AlN template by HT-HVPE (High Temperature Hydride Vapor Phase Epitaxy). The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afa1164abe2c21fb2504c34cdae6197c
https://doi.org/10.1016/j.phpro.2013.07.050
https://doi.org/10.1016/j.phpro.2013.07.050