Zobrazeno 1 - 10
of 160
pro vyhledávání: '"N. C. Mishra"'
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095065-095065-6 (2019)
This work reports the formation of topological Bi2Se3 phase upon annealing higher % of Bi content in amorphous As40Se60-xBix (x = 2, 7, 10 and 15%) chalcogenide thin films prepared by thermal evaporation process. The phase identification was done by
Externí odkaz:
https://doaj.org/article/570bcbb9e4a24d869676c537c96e6cef
Publikováno v:
BioResources, Vol 7, Iss 3, Pp 3125-3131 (2012)
Absorbent-grade paper is a highly specialized product due to introduction of certain special characteristics, namely high water absorbency, castor oil penetration (COP), and porosity. Water absorbency is affected by the radius of capillaries within t
Externí odkaz:
https://doaj.org/article/55ff8ee2e9a843939f8f8f00efc82f72
Publikováno v:
Advanced Materials Proceedings. 1:200-204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c8c95611928b53f12a6979e78b9854
https://doi.org/10.5185/amp.2016/216
https://doi.org/10.5185/amp.2016/216
Publikováno v:
Advanced Materials Proceedings. 1:109-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::663250b7d9183c05691b378f7396d20b
https://doi.org/10.5185/amp.2016/1xx
https://doi.org/10.5185/amp.2016/1xx
Publikováno v:
RSC Advances. 11:26218-26227
Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner. In the present study, the 120 MeV Ag ion irradiation on AgInSe2 nanoparticle thin films prepared by the thermal evapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d0a6448478faad5970fe9366a8fb9a
https://doi.org/10.1039/d1ra03409j
https://doi.org/10.1039/d1ra03409j
Publikováno v:
Phase Transitions. 93:148-157
The laser irradiation with band gap light of thermally evaporated As40Se55Bi5 and As40Se45Bi15 thin films was found to be accompanied by structural changes which in turn changed the optical constan...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419a55c4e1e4536a9d007772d751fcea
https://doi.org/10.1080/01411594.2019.1687895
https://doi.org/10.1080/01411594.2019.1687895
Autor:
Michael Baenitz, N. C. Mishra, Lisha Raghavan, K. M. Ranjith, Sunil Ojha, D. Kanjilal, Indra Sulania
Publikováno v:
Thin Solid Films. 680:40-47
The interface of Ni-NiO thin films was developed by thermal evaporation of nickel and subsequent annealing in oxygen atmosphere at 400 °C at varying duration of time. The evolution of layer thicknesses with annealing time was studied using rutherfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca36c05fde33cc14a98bd26828ac3a64
https://doi.org/10.1016/j.tsf.2019.04.034
https://doi.org/10.1016/j.tsf.2019.04.034
Autor:
Ramakanta Naik, K. Asokan, N. C. Mishra, H. Rath, Udai P. Singh, B. N. Dash, M. Panda, Rozalin Panda
Publikováno v:
Applied Surface Science. 479:997-1005
Evolution of the structure and surface morphology of thin films composed of two selenium based chalcogenide phases, AgInSe2 and Ag2Se on 140 MeV ion irradiation is reported. At this high energy, the projectile Ni ions sputtered the surface of the fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566fc7aa402f6b9ded31062752ca5c4c
https://doi.org/10.1016/j.apsusc.2019.01.251
https://doi.org/10.1016/j.apsusc.2019.01.251
Publikováno v:
Indian Journal of Physics. 94:469-475
The structural, microstructural and electronic band gap properties of bilayer Bi/As2Se3 thin films prepared on glass substrate have been discussed in detail. The thin films prepared by thermal evaporation technique under high vacuum were characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8a5097074accd6f976d0a14ded25bb
https://doi.org/10.1007/s12648-019-01484-w
https://doi.org/10.1007/s12648-019-01484-w
Publikováno v:
Physica B: Condensed Matter. 560:51-59
In the present study, Bi/As2Se3 bilayer thin films (100 nm Bi as top layer and 800 nm As2Se3 as bottom layer) were prepared by thermal evaporation technique and were annealed at 165 °C for ½ h, 1 h and 2 h. The structural, micro-structural and opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37c5a7202ec11c75e67e62c8d00b15a
https://doi.org/10.1016/j.physb.2019.02.034
https://doi.org/10.1016/j.physb.2019.02.034