In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

Autor: B. Ben Yahia, M.S. Amara, M. Gallard, N. Burle, S. Escoubas, C. Guichet, M. Putero, C. Mocuta, M.-I. Richard, R. Chahine, C. Sabbione, M. Bernard, L. Fellouh, P. Noé, O. Thomas

Publikováno v: Micro and Nano Engineering, Vol 1, Iss , Pp 63-67 (2018)

Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallizati

Externí odkaz: https://doaj.org/article/efe0ec581a7e4923851363076d921cfa

In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

Autor: Mathieu Bernard, B. Ben Yahia, Magali Putero, M. Gallard, Olivier P. Thomas, Cristian Mocuta, R. Chahine, M. Amara, C. Guichet, S. Escoubas, L. Fellouh, Pierre Noé, N. Burle, C. Sabbione, Marie-Ingrid Richard

Publikováno v: Micro and Nano Engineering, Vol 1, Iss, Pp 63-67 (2018)
Micro and Nano Engineering
Micro and Nano Engineering, Elsevier, 2018, ⟨10.1016/j.mne.2018.10.001⟩
'Micro and Nano Engineering ', vol: 1, pages: 63-67 (2018)
Micro and Nano Engineering, 2018, ⟨10.1016/j.mne.2018.10.001⟩

Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallizati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d5369b824964241d506db3bbb0fb608
http://www.sciencedirect.com/science/article/pii/S2590007218300030

Atomic redistribution of implanted Fe and associated defects around moving SiO 2 /Si interfaces

Autor: N. Burle, Anthony De Luca, Alain Portavoce, Catherine Grosjean, Stéphane Morata, Michael Texier

Publikováno v: physica status solidi (c)
physica status solidi (c), Wiley, 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩
physica status solidi (c), 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩

The behaviour of Fe atoms at the Si/SiO2 interface, as a modelisation of an involuntary Fe contamination before or during the oxidation process has been studied in Fe-implanted wafers. As-implanted and oxidized wafers were characterized by SIMS, APT,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd9137eda30503df4218a70defa8c3bb
https://doi.org/10.1002/pssc.201400233

Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles

Autor: Bernard Pichaud, C. Serafino, N. Burle, Julien Nicolai

Publikováno v: Journal of Crystal Growth. 372:138-144

The effects of oxidizing annealing cycles on Si high-quality wafers (as used to monitor IC production tools or SOI applications) were studied using different techniques (nano-scale observations and chemical analysis in Transmission Electron Microscop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9025b62b7e0e8d2478a2cc42a1c943ee
https://doi.org/10.1016/j.jcrysgro.2013.03.041

X‐ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers

Autor: S. Escoubas, Jürgen H. Werner, Michael Oehme, Erich Kasper, Klara Lyutovich, N. Burle

Publikováno v: physica status solidi c. 10:52-55

Molecular Beam Epitaxy (MBE) grown, 50-800 nm thick SiGe layers on Si are studied by two X-ray complementary techniques: imaging (X-ray topography) and High Resolution X-Ray Diffraction. The measured relaxation rates are spreding from as low as 0.01%

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a5bbf9d1f2c276771d11341f9ffc9f4
https://doi.org/10.1002/pssc.201200544