Zobrazeno 1 - 10
of 86
pro vyhledávání: '"N. Buard"'
Autor:
Alessandro Paccagnella, A. Panariti, Florent Miller, Simone Gerardin, N. Buard, Luca Sterpone, A. Bocquillon, Massimo Violante, A. Manuzzato
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2325-2332
Multiple Cell Upsets (MCUs) are becoming a growing concern with the advent of the newest FPGA devices. In this paper we present a methodology suitable for analyzing the sensitivity of circuits implemented in SRAM-based FPGAs, and adopting the TMR mit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6f2cc7b7c7756fef45485b108873a1a
https://doi.org/10.1109/tns.2011.2161887
https://doi.org/10.1109/tns.2011.2161887
Publikováno v:
IEEE Transactions on Nuclear Science. 58:813-819
This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of destructive single event effects in power devices. Laser tests and simulations are used to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7492f84fee0ad9199adfb16d8af39a5
https://doi.org/10.1109/tns.2010.2098887
https://doi.org/10.1109/tns.2010.2098887
Autor:
Florent Miller, Patrick Austin, A. Luu, Thierry Carriere, P. Poirot, N. Buard, G. Sarrabayrouse, R. Gaillard, Marise Bafleur
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1900-1907
This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e441b8b2906db0e95d9faac7989ccde
https://doi.org/10.1109/tns.2010.2044808
https://doi.org/10.1109/tns.2010.2044808
Publikováno v:
IEEE Transactions on Nuclear Science. 57:272-278
In this work, using heavy ion and pulsed laser tests on a 110 nm 256 Mbit SDRAM, different SEFI types and other logic-related radiation effects are studied and explained. Effects seen using heavy ions were reproduced and localized on the die with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9163364f39f960ba38b1790bfd086b47
https://doi.org/10.1109/tns.2009.2037418
https://doi.org/10.1109/tns.2009.2037418
Autor:
N. Buard, S. Rocheman, C. Weulersse, Jean-Roch Vaillé, Frédéric Wrobel, Frédéric Saigné, T. Carriere
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.3146-3150. ⟨10.1109/TNS.2008.2006264⟩
Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0448bc83a8b4341fb08cd639a116c345
https://doi.org/10.1109/tns.2008.2006264
https://doi.org/10.1109/tns.2008.2006264
Autor:
A. Luu, Florent Miller, T. Carriere, G. Sarrabayrouse, Marise Bafleur, R. Gaillard, P. Poirot, N. Buard, Patrick Austin
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2166-2173
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8c1a3d90eb9bd59a0df8d204685038
https://doi.org/10.1109/tns.2008.921934
https://doi.org/10.1109/tns.2008.921934
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3145-3152
This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8141145be27984ecff941394fcae20ff
https://doi.org/10.1109/tns.2006.885376
https://doi.org/10.1109/tns.2006.885376
Autor:
Damien Lambert, P. Paillet, Thierry Carriere, J. Baggio, Frédéric Saigné, B. Sagnes, Sylvain Girard, V. Ferlet-Cavrois, N. Buard, Guillaume Hubert, O. Flament, Jerome Boch
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (4), pp.1890-1896. ⟨10.1109/TNS.2006.880935⟩
IEEE Transactions on Nuclear Science, 2006, 53 (4), pp.1890-1896. ⟨10.1109/TNS.2006.880935⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (4), pp.1890-1896. ⟨10.1109/TNS.2006.880935⟩
IEEE Transactions on Nuclear Science, 2006, 53 (4), pp.1890-1896. ⟨10.1109/TNS.2006.880935⟩
International audience; This paper investigates the single event upset sensitivity of Bulk SRAMs for terrestrial applications. The technology sensitivity is analyzed with both quasi-monoenergetic neutron and proton experiments in an energy range from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2964dd635574f59dd1053e6ec936ecfd
https://doi.org/10.1109/tns.2006.880935
https://doi.org/10.1109/tns.2006.880935
Autor:
Thierry Carriere, R. Gaillard, Florent Miller, B. Sagnes, P. Poirot, J.-M. Palau, R. Dufayel, N. Buard, Pascal Fouillat
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3708-3715
This work presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot size on the threshold energy of the SEU cross-section curves. A new methodology is proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395309ccceb57e156cc26bdf419c913e
https://doi.org/10.1109/tns.2004.839261
https://doi.org/10.1109/tns.2004.839261
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2003, 43, pp.1
Microelectronics Reliability, Elsevier, 2003, 43, pp.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41b6e312a81a4582dd09138a4600d8d8
https://doi.org/10.1016/s0026-2714(03)00284-1
https://doi.org/10.1016/s0026-2714(03)00284-1