Zobrazeno 1 - 10
of 50
pro vyhledávání: '"N. Braslau"'
Autor:
Jerry M Woodall, A. C. Warren, George David Pettit, M. R. Melloch, D. T. McInturff, N. Braslau, Peter D. Kirchner
Publikováno v:
Applied Physics Letters. 60:448-450
We report on photoemission measurements of molecular‐beam‐epitaxy‐grown GaAs p‐i‐n structures, in which the optically active insulating GaAs layer contains As precipitates (GaAs:As). GaAs:As is formed by low‐temperature growth of GaAs at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c387f385b1b8cf2642282c3f0301ec0
https://doi.org/10.1063/1.106630
https://doi.org/10.1063/1.106630
Publikováno v:
Applied Physics Letters. 63:189-190
We report noncontact measurements of the effective minority carrier lifetime in the superficial silicon layer of silicon‐on‐insulator wafers. The carriers are excited by a pulse of short‐wavelength photons (λ≤350 nm), all of which are absorb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b48b147326eec98cf31bb9589fdf98
https://doi.org/10.1063/1.110395
https://doi.org/10.1063/1.110395
Autor:
N. Braslau, D. T. McInturff, Peter D. Kirchner, A. C. Warren, Jerry M Woodall, George David Pettit, Michael R. Melloch
Publikováno v:
Applied Physics Letters. 62:2367-2368
We report on photoemission measurements of MBE‐grown Al0.27Ga0.73As p‐i‐n structures in which the optically active insulating layers contain arsenic precipitates (Al0.27Ga0.73As:As). Al0.27Ga0.73As:As layers were formed by low temperature growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3adbf39458bde2a533e8faa5b775a46
https://doi.org/10.1063/1.109392
https://doi.org/10.1063/1.109392
Publikováno v:
Journal of Applied Physics. 61:1516-1522
The dependence of the Schottky barrier height of Mo‐n:AlGaAs junctions, fabricated in situ by molecular beam epitaxy, on the Al mole fraction (x) was determined by internal photoemission measurements and by activation energy plots of the current ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab480dd761bb8c04842727fc39908b42
https://doi.org/10.1063/1.338085
https://doi.org/10.1063/1.338085
Autor:
N. Braslau
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:3085-3090
Despite the rapid maturing of GaAs as an integrated circuit technology, both for digital and analog applications, the rather empirical nature of our contact metallurgy betrays a lack of basic scientific understanding of the metal–semiconductor inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25127f920707d8cfc46b7bf1cd476354
https://doi.org/10.1116/1.573633
https://doi.org/10.1116/1.573633
Publikováno v:
Solid-State Electronics. 31:337-340
We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in DC measurements at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4075037bbecf66a3d37042830ed505d
https://doi.org/10.1016/0038-1101(88)90290-0
https://doi.org/10.1016/0038-1101(88)90290-0
Publikováno v:
Journal of Applied Physics. 62:4812-4820
Barrier heights of refractory W, WSix, and WAlx Schottky contacts deposited on n‐GaAs with different surface treatments have been electrically characterized by current‐voltage, capacitance‐voltage, and internal photoemission measurements. Inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8b477a5830e8635602c1452ffe18af
https://doi.org/10.1063/1.338984
https://doi.org/10.1063/1.338984
Autor:
N. Braslau, P. P. Sorokin
Publikováno v:
IBM Journal of Research and Development. 8:177-181
A double quantum stimulated emission device is proposed and some operating characteristics and relevant systems of materials are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c3c39160683555346355fdb8ad42f97
https://doi.org/10.1147/rd.82.0177
https://doi.org/10.1147/rd.82.0177
Publikováno v:
Physical Review. 123:1801-1811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4a6c8e92e5e68658fdc114fd000eef
https://doi.org/10.1103/physrev.123.1801
https://doi.org/10.1103/physrev.123.1801
Autor:
N. Braslau, Gilbert O. Brink
Publikováno v:
Review of Scientific Instruments. 30:670-674
A system is described which allows the magnetic field of the ``C'' magnet of an atomic‐beam magnetic‐resonance apparatus to be locked to a resonance in the beam. The construction of the system is discussed and representative performance data are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f22c3398bcb35417d85c83854dcc7cf
https://doi.org/10.1063/1.1716719
https://doi.org/10.1063/1.1716719