Zobrazeno 1 - 10
of 89
pro vyhledávání: '"N. Bottka"'
Publikováno v:
Materials Science and Engineering: B. 11:125-129
Cubic silicon carbide (β-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050°C. The silicon laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7fd96bfe01346e6128a1421cc2dbb9b
https://doi.org/10.1016/0921-5107(92)90204-m
https://doi.org/10.1016/0921-5107(92)90204-m
Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy
Publikováno v:
Journal of Crystal Growth. 107:893-897
High performance heterojunction bipolar transistor (HBT) integrated circuits are extremely dependent upon the uniformity and quality of the III–V compound heteroepitaxial materials used in their fabrication. HBT requirements include the need for ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a228aa779adf5918fa4c4a7012f6cd3
https://doi.org/10.1016/0022-0248(91)90576-q
https://doi.org/10.1016/0022-0248(91)90576-q
Autor:
N. Bottka, Robert Glosser, Walter M. Duncan, R.L. Henry, P.E.R. Nordquist, C. Durbin, D. K. Gaskill, J. P. Estrera
Publikováno v:
Applied Physics Letters. 61:1549-1551
Anomalous splitting has been observed in the photoreflectance (PR) response of SI:GaAs in the vicinity of the exciton at 78 K. Photoluminescence (PL) measurements suggest the splitting is correlated with the EL2 content of the samples. Separation bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0a71796d25fd0a1fa328f5fa8e294b
https://doi.org/10.1063/1.107492
https://doi.org/10.1063/1.107492
Publikováno v:
Applied Physics Letters. 58:1419-1421
Cubic (β) silicon carbide films have been grown epitaxially on silicon‐on‐sapphire (SOS) substrates by chemical vapor deposition. The β‐SiC films were grown between 1340–1370 °C on SOS substrates which have a layer of silicon deposited in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8a5ba8213539832004d2ee5e0ef00f
https://doi.org/10.1063/1.105185
https://doi.org/10.1063/1.105185
Publikováno v:
Applied Physics Letters. 56:1269-1271
Photoreflectance‐derived band‐gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b351b01424fb3c9ac5e9a2070f4f71be
https://doi.org/10.1063/1.102533
https://doi.org/10.1063/1.102533
Autor:
R. L. Henry, N. Bottka, C. Durbin, Robert Glosser, J. P. Estrera, Walter M. Duncan, P.E.R. Nordquist, D. K. Gaskill
Publikováno v:
MRS Proceedings. 262
Anomalous splitting has been observed in the photoreflectance (PR) response of SI:GaAs in the vicinity of the exciton at 78 K. Recent photohiminescence (PL) measurements suggest the splitting is correlated with the EL2 content of the samples. Separat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ed3bd80ec6aaac2fae408553343b9a
https://doi.org/10.1557/proc-262-289
https://doi.org/10.1557/proc-262-289
Publikováno v:
SPIE Proceedings.
Photoreflectance (PR) was used to determine the surface damage caused by polishing on semi-insulating lnP:Fe substrates. PR measurements were performed between subsequent etching steps. The PR results on substrates, obtained from various vendors and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62b248f8eecc1b29e750f3bbe8616cbf
https://doi.org/10.1117/12.20873
https://doi.org/10.1117/12.20873
Publikováno v:
MRS Proceedings. 216
To date, OMVPE has failed to grow epitaxial InSb at temperatures below about 400 °C. Therefore, we have studied InSb deposition using the novel group V source triisopropylantimony (TIPSb) with trimethylindium (TMIn), comparing this with results in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a444f6b452a4c1ce7df840591bab2fe
https://doi.org/10.1557/proc-216-239
https://doi.org/10.1557/proc-216-239
Publikováno v:
Journal of Crystal Growth. 77:418-423
Thin films of GaN have been grown on A12O3, Si and GaAs using trimethylgallium and hydrazine (N2H4) in N2 at atmospheric pressure. Growth proceeded by the formation of a room temperature adduct which decomposed to form GaN in the temperature range 42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d714b7f943968ba98c0021768fa29a85
https://doi.org/10.1016/0022-0248(86)90332-5
https://doi.org/10.1016/0022-0248(86)90332-5
Publikováno v:
Journal of Applied Physics. 57:432-437
A detailed electroreflectance (ER) and photoluminescence study has been performed of impurity‐related, below‐gap electroabsorption (EA) features in bulk Sn‐ and Si‐doped GaAs as well as in thin epitaxial layers of GaAs and Ga1−xAlxAs/GaAs,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd4b962b896dab843a5341b6892e3ea5
https://doi.org/10.1063/1.334769
https://doi.org/10.1063/1.334769