Zobrazeno 1 - 10
of 63
pro vyhledávání: '"N. Benouattas"'
Publikováno v:
Journal of Nano- and Electronic Physics. 10:04006-1
Electron field emission was investigated from multi-walled carbon nanotubes (MWCNT)/polyethylene oxide (PEO) composites with (5, 15, 25, 33, 40 and 50wt.% of MWCNTs). The resulted samples were characterized using Raman spectroscopy to estimate The MW
Publikováno v:
Solar Energy Materials and Solar Cells. 93:262-266
CuInSe 2 films of 2 μm thickness were electrodeposited potentiostatically, from aqueous solution containing thiocyanate as a complexing agent, on Mo substrates. For all the experiments, the potential of the potentiostatic deposition of the materials
Publikováno v:
Materials Science Forum. 609:161-165
The ternary system has been built by the deposit of two metal coats (layers), Gold and Palladium on a monocrystalline Silicon substrate of orientation (111). The whole system has been subjected to a vacuum heat treatment, the range of temperatures st
Publikováno v:
Vacuum. 81:489-493
Bilayers of pure palladium and gold films were evaporated alternatively on (1 0 0) and (1 1 1) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650 °C during 30 min, the growth sequence of the Pd 2 Si and PdSi pha
Publikováno v:
Materials Science and Engineering: B. 132:283-287
Cu/Au and Au/Cu multilayered films were thermally evaporated alternatively on (1 0 0) and (1 1 1) monocrystal silicon substrates with and without native silicon oxide. After heat treatment in situ either at 400 or at 600 °C, the interfacial transfor
Publikováno v:
Applied Surface Science. 252:7572-7577
Copper thin films are deposited by thermal evaporation on unetched and etched monocrystalline silicon. The study by alpha particles backscattering (RBS) raises a strong diffusion of copper in silicon substrates with and without native suboxide layer.
Publikováno v:
Microelectronic Engineering. 81:349-352
Si(100) and (111) oriented silicon wafers were used as a substrate for metallic bilayers deposition of copper and gold. Cu/Au/Si structures were obtained by thermal evaporation and then heated below 400^oC in vacuum. These solid-state reactions occur
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 230:571-576
Thermal evaporation is used to deposit Au/Cu and Cu/Au bilayers on (1 1 1) monocrystalline silicon substrates. The layers composition and surface morphology are performed as function of annealing temperature at 200 and 400 °C using X-ray diffraction
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 213:519-522
Multilayered of pure gold and copper films were evaporated alternatively on (1 0 0) monocrystal silicon substrates. Annealing, in a furnace vacuum, were carried out at 200 and 400 °C for 30 min. The obtained samples were analyzed by means of Rutherf
Publikováno v:
Materials Science in Semiconductor Processing. 7:319-324
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 A thickne