Zobrazeno 1 - 5
of 5
pro vyhledávání: '"N. B. Mustafayev"'
Publikováno v:
Semiconductors. 47:315-318
The effect of excess Te atoms (as high as 0.5 at %) and thermal treatment at 473 K for 120 h on the electrical conductivity σ, the thermopower coefficient α, and the Hall coefficient R of Pb0.96Mn0.04Te single crystals in the temperature range ∼7
Publikováno v:
Semiconductors. 45:1391-1394
The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity σ, thermopower α, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly
Publikováno v:
Semiconductors. 48:139-141
The electrical conductivity σ, Hall coefficients R, and thermopower α of Pb0.96Mn0.04Te (Te) single crystals annealed at 573 K for 120 h are investigated. It is shown that, in contrast to unannealed samples, the investigated samples exhibit n-type
Publikováno v:
Semiconductors. 43:139-141
It is established that nonuniformity of electrical parameters conditioned by a nonuniform distribution of excess Te exists along the single-crystal PbTe ingot. In addition to the shallow acceptor and donor levels, deep acceptor levels with activation
Publikováno v:
SPIE Proceedings.
Surface conductivity of the thermoelements on a basis of the extruded samples of Bi 0.5 Sb 1.5 Te 3 and Bi 2 Te 2.7 Se 0.3 solid solutions and influence of the distorted surface layer, arising at manufacturing thermoelements on their bulk thermoelect