Zobrazeno 1 - 10
of 46
pro vyhledávání: '"N. Ashkenov"'
Autor:
Matthias Brandt, V. M. Voora, Mathias Schubert, Marius Grundmann, N. Ashkenov, Michael Lorenz, Tino Hofmann
Publikováno v:
Journal of Electronic Materials. 37:1029-1034
Heterojunctions composed of wurtzite-structure (piezoelectric) ZnO and perovskite-structure (ferroelectric) BaTiO3 are very interesting because of the previously observed ionic lattice polarization coupling at their interfaces. We report electric Saw
Autor:
Mathias Schubert, Tanja Paskova, Bo Monemar, Vanya Darakchieva, N. Ashkenov, M. Bukowski, Tadeusz Suski, Plamen Paskov, Detlef Hommel
Publikováno v:
physica status solidi c. 3:1475-1478
Bending in HVPE GaN free-standing films : effects of laser lift-off, polishing and high temperature annealing
Autor:
Marius Grundmann, E. Twerdowski, Holger von Wenckstern, Wolfgang Grill, N. Ashkenov, Mathias Schubert, B. N. Mbenkum, Holger Hochmuth, Michael Lorenz
Publikováno v:
Thin Solid Films. 486:153-157
Electrical and polarization hysteresis measurements on Pt–BaTiO 3 –ZnO–Pt heterostructures, grown by pulsed laser deposition on (001)Si, are reported. The layers were deposited without breaking the vacuum using a switchable target holder. Offse
Publikováno v:
physica status solidi (c). 2:3293-3297
Adsorption of human serum albumin in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry
Autor:
Mathias Schubert, E. M. Kaidashev, Andreas Rahm, Carsten Bundesmann, Michael Lorenz, Marius Grundmann, Holger von Wenckstern, N. Ashkenov
Publikováno v:
Thin Solid Films. :161-166
Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm −1 was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r -plane sapphire. Combined wavelength-by-wavelength analysis
Publikováno v:
Thin Solid Films. :726-730
Porous silicon layers with a one-dimensional lateral gradient in pore size are prepared by electrochemical etching and characterized by spectroscopic ellipsometry in the visible to near-infrared region. The ellipsometer is equipped with a micro-spot
Publikováno v:
physica status solidi (a). 195:516-522
The lattice parameters of as-grown hydride vapor phase epitaxy GaN layers on sapphire, free-standing layers after the substrate lift-off, and homoepitaxial layers grown on the free-standing layers are measured. The in-plane and out-of-plane strains a
Autor:
E. M. Kaidashev, Carsten Bundesmann, Vanya Darakchieva, Marius Grundmann, V. Riede, B. N. Mbenkum, Hans Arwin, Mathias Schubert, Bo Monemar, Daniel Spemann, N. Ashkenov, Horst Neumann, Gerald Wagner, A. Kasic, Michael Lorenz
Publikováno v:
Journal of Applied Physics. 93:126-133
Infrared dielectric function spectra and phonon modes of high-quality, single crystalline, and highly resistive wurtzite ZnO films were obtained from infrared (300–1200 cm−1) spectroscopic ellipsometry and Raman scattering studies. The ZnO films
Autor:
Tilman Butz, Carsten Bundesmann, Daniel Spemann, N. Ashkenov, Mathias Schubert, Michael Lorenz, E. M. Kaidashev, Marius Grundmann
Publikováno v:
Applied Physics Letters. 83:1974-1976
Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm−1, rece
Autor:
Marius Grundmann, Daniel Spemann, N. Ashkenov, E. M. Kaidashev, Michael Lorenz, M. Schubert, Horst Neumann, Carsten Bundesmann, Tilman Butz, Gerald Wagner
Publikováno v:
Applied Physics Letters. 81:2376-2378
Infrared dielectric function spectra and phonon modes with polarization parallel and perpendicular to the c axis of high quality, highly relaxed, and single crystalline wurtzite MgxZn1−xO films with 0⩽x⩽0.2 prepared by pulsed-laser deposition o