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pro vyhledávání: '"N. Arkali Radhakrishna"'
Autor:
D. Becher, P. Newman, A. Kornfeld, N. Arkali Radhakrishna, Sanjay Natarajan, S. Mudanai, K. Maurice, Paul A. Packan, Martin D. Giles, Titash Rakshit
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
Random variation of threshold voltage (Vt) in MOSFETs plays a central role in determining the minimum operating voltage of products in a given process technology. Properly characterizing Vt variation requires a large volume of measurements of minimum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cfe1d28e4af356b878cced49684ca26
https://doi.org/10.1109/vlsit.2015.7223657
https://doi.org/10.1109/vlsit.2015.7223657
