Zobrazeno 1 - 10
of 20
pro vyhledávání: '"N. A. Viglin"'
Publikováno v:
Journal of Experimental and Theoretical Physics. 134:736-742
Publikováno v:
Physics of the Solid State. 62:2301-2304
In a semiconductor spin device with electrodes formed from the Fe2NbSn half-metallic ferromagnet film, a spin polarization of PS = 4% of electrons injected into the InSb semiconductor has been obtained. This corresponds to the maximum possible PS val
Publikováno v:
JETP Letters. 110:273-278
Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO diel
Publikováno v:
Semiconductors. 53:264-267
The formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb
Autor:
N. A. Viglin, N. G. Bebenin
Publikováno v:
Physics of Metals and Metallography. 119:1289-1292
The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental
Publikováno v:
Journal of Physics: Conference Series. 1389:012143
Technological route is reported how to fabricate an InSb spin device for studying spin-transport phenomena in CPP geometry. The device, which consists of ferromagnetic CoFe layer and MgO tunnel barrier deposed on the n-InSb single-crystal substrate,
Autor:
Alexey O. Shorikov, N. G. Bebenin, V. V. Ustinov, E. I. Patrakov, V. M. Tsvelikhovskaya, Sergej O. Demokritov, T. N. Pavlov, N. A. Viglin
Publikováno v:
Physical Review B. 96
Publikováno v:
JETP Letters. 101:113-117
A lateral spintronic device has been created on the basis of the InSb semiconductor with an iron injector and an iron detector of spin-polarized electrons that are separated from the semiconductor channel by a MgO tunnel barrier. The electric injecti
Autor:
M. A. Milyaev, S. V. Naumov, K. A. Belozerova, E. I. Patrakov, E. I. Shreder, N. A. Viglin, Alexey O. Shorikov, V. V. Marchenkov
Publikováno v:
The Physics of Metals and Metallography. 114:1003-1008
Method of magnetron sputtering of mosaic targets has been used to prepare thin films of Fe2NbSn and Co2Cr0.6Fe0.4Al Heusler alloys. In these alloys, the band calculations predict the existence of a high degree of polarization of charge carriers. The
Publikováno v:
Solid State Phenomena. :43-46
A promising idea to use the transport of spin-polarized conduction electrons in a magnetic hetero-structure in order to invert population of the charge-carrier spin level in one of its layers, aiming at creation of an active environment for the elect