Zobrazeno 1 - 10
of 66
pro vyhledávání: '"N. A. Usachev"'
Publikováno v:
Russian Chemical Bulletin. 71:1641-1647
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad06c043dde0d0cdb0ab048329d40548
https://doi.org/10.1007/s11172-022-3573-4
https://doi.org/10.1007/s11172-022-3573-4
Autor:
K. M. Amburkin, N. A. Usachev, Nikita M. Zhidkov, Igor O. Metelkin, D. I. Sotskov, Dmitry M. Amburkin, Dmitry V. Boychenko, Alexander G. Kuznetsov, V. V. Elesin, Varvara V. Elesina
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2396-2404
This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon–germanium (SiGe) and gallium arsenide (GaAs) heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d5b42db1462e1dff136e9d770ea5a4
https://doi.org/10.1109/tns.2020.3015560
https://doi.org/10.1109/tns.2020.3015560
Autor:
Alexander Y. Nikiforov, D. I. Sotskov, V. V. Elesin, N. A. Usachev, Alexander G. Kuznetsov, Nikita M. Zhidkov
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 33:317-326
Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 ?m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be17d91bf36261c066cbe442166169e3
https://doi.org/10.2298/fuee2002317s
https://doi.org/10.2298/fuee2002317s
Autor:
N. A. Usachev, V. N. Kotov, I. A. Selishchev, A. O. Balbekov, D. I. Sotskov, V. V. Elesin, A. G. Kuznetsov
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
Design and testing results of I/Q mixer and voltage-controlled oscillator IP-blocks for application in 5G communications are presented. IP-blocks were implemented in a commercial 0.42/0.25 μm SiGe BiCMOS process. The test results demonstrate that de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e900e7df0e9596d94033ced5d5eeeb82
https://doi.org/10.1109/miel52794.2021.9569068
https://doi.org/10.1109/miel52794.2021.9569068
Autor:
D. I. Sotskov, G. V. Chukov, Alexander G. Kuznetsov, Alexander Y. Nikiforov, V. V. Elesin, N. A. Usachev
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies – CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 µm process, GaAs heterojunction bipolar transistor (HBT) 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba71699b4f7b311235bd2dd3a1f8525
https://doi.org/10.1109/sibcon50419.2021.9438923
https://doi.org/10.1109/sibcon50419.2021.9438923
Autor:
Nikita M. Zhidkov, Alexander Y. Nikiforov, Igor O. Metelkin, D. I. Sotskov, N. A. Usachev, V. V. Elesin
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
Compact models of silicon-germanium and gallium-arsenide heterojunction bipolar transistors, gallium-arsenide pseudomorphic high electron mobility transistor, and silicon on insulator field-effect transistor radiation responses are presented. Special
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca34c774ec8d6e77bd09be9949e9c18
https://doi.org/10.1109/sibcon50419.2021.9438867
https://doi.org/10.1109/sibcon50419.2021.9438867
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
Radio frequency identification systems (RFID) are widely used for monitoring and localization of underground infrastructure objects: pipelines, power, and communication networks. Wireless underground sensor networks (WUSN) are the promising applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e7f6de61b1488094a0f0211c2b074c
https://doi.org/10.1109/sibcon50419.2021.9438887
https://doi.org/10.1109/sibcon50419.2021.9438887
Autor:
G. N. Nazarova, G. V. Chukov, N. A. Usachev, Vladimir A. Dmitriev, N.A. Shelepin, A.V. Seletskiy, Igor O. Metelkin, Nikita M. Zhidkov, V. V. Elesin, D. I. Sotskov, A. Yu. Nikiforov
Publikováno v:
Proceedings of Universities. ELECTRONICS. 22:546-558
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fec22419ba04a4f84185af9b774e27b
https://doi.org/10.24151/1561-5405-2017-22-6-546-558
https://doi.org/10.24151/1561-5405-2017-22-6-546-558
Publikováno v:
Russian Microelectronics. 46:365-369
This paper presents a technique for optimizing small-signal parameters of monolithic microwave signal switches on MOS transistors. The technique is based on analytical expressions and visual plots that allow us to determine the topological sizes of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122df9db29a2a5dc081a053938243ee7
https://doi.org/10.1134/s106373971705002x
https://doi.org/10.1134/s106373971705002x
Autor:
A. G. Kuznetsov, N. A. Usachev, K. M. Amburkin, N. M. Zidkov, D. I. Sotskov, G. V. Chukov, V. V. Elesin, M. I. Titova
Publikováno v:
2019 IEEE 31st International Conference on Microelectronics (MIEL).
Results of domestic D-mode pHEMT 0.5 µm process characterization obtained during the design and testing of the single power supply wide-band low noise amplifier (LNA) are present. The simulation and test results demonstrate that designed cascode LNA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2cd4b2d73ba4bb6d54f457d81565a24
https://doi.org/10.1109/miel.2019.8889636
https://doi.org/10.1109/miel.2019.8889636