Zobrazeno 1 - 10
of 25
pro vyhledávání: '"N. A. Tursunov"'
Publikováno v:
European Science Review. :41-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0e0d12892f113b03effb22d59d5796
https://doi.org/10.29013/esr-18-9.10.2-41-44
https://doi.org/10.29013/esr-18-9.10.2-41-44
Autor:
B. B. Amanov, Kh. K. Abrolov, N. T. Tursunov, R. A. Ibadov, O. D. Eshonkhodzhaev, Sh. N. Khudaibergenov, O. T. Irisov, A. T. Mustafayev, M. M. Mirolimov
Publikováno v:
Khirurgiia. (11. Vyp. 2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a87fd0768c9cd2b98685269930fdf4b
https://pubmed.ncbi.nlm.nih.gov/28008903
https://pubmed.ncbi.nlm.nih.gov/28008903
Autor:
N. A. Tursunov, M. N. Erdonov, Sh. Makhkamov, A. R. Sattiev, R. A. Muminov, Kh. M. Kholmedov, M. Karimov, K. P. Abdurakhmanov
Publikováno v:
Applied Solar Energy. 49:185-191
The influence of y-radiation on the photoelectric characteristics of solar cells (SCs) made of zincdoped silicon has been studied. It has been proved that the degradation degree of SC photoelectric characteristics depended on the concentration of zin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb2f0a1772a4e360c8fcaa12afac365
https://doi.org/10.3103/s0003701x13040117
https://doi.org/10.3103/s0003701x13040117
Influence of the conductivity type of silicon on the process of radiation degradation of solar cells
Autor:
R. A. Muminov, N. A. Tursunov, Sh. Makhkamov, Kh. M. Kholmedov, A. R. Sattiev, M. Karimov, M. N. Erdonov
Publikováno v:
Applied Solar Energy. 49:62-66
The effectiveness of introduction of radiation defects (RDs) into the base of solar cells (SCs) during irradiation by γ-quanta 60Co depending on resistivity and type of monocrystalline silicon and the effect of induced RDs on photoelectric character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb15c8fce4385f550b4b36ae10d3025
https://doi.org/10.3103/s0003701x13020084
https://doi.org/10.3103/s0003701x13020084
Publikováno v:
Russian Physics Journal. 54:589-593
The influence of the defects induced by fast-neutron irradiation on the rate of charge-carrier removal in nuclear-doped silicon (p-Si ) and a test p-Si sample is studied by measuring the Hall coefficient and resistivity at room temperature. It is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd5337928d27a82ea65f1cca17e15e3
https://doi.org/10.1007/s11182-011-9656-6
https://doi.org/10.1007/s11182-011-9656-6
Autor:
N. A. Tursunov, K. A. Begmatov, A. Kh. Sadikov, M. Karimov, A. K. Karakhodzhaev, Sh. A. Makhmudov, Sh. Makhkamov
Publikováno v:
Russian Physics Journal. 52:448-451
The relaxation kinetics of photoconductivity in neutron-doped silicon (NDS) of the p-type is discussed. It is found that the relaxation process in the compensated p-Si differs from that in the reference p-Si sample. The difference is explained on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaae77ede2ca1ded4dfad91cd6d5846e
https://doi.org/10.1007/s11182-009-9253-0
https://doi.org/10.1007/s11182-009-9253-0
Publikováno v:
Physics of the Solid State. 51:456-464
The possible formation of ZnO nanocrystals was studied as a result of radiolysis of a ZnSe crystal surface exposed to zinc vapor and irradiated with gamma rays and in producing ZnSe-ZnO heterostructures. Under 60Co gamma radiation in air, nanocrystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f1557174fe69dbcaf769a9446f7374
https://doi.org/10.1134/s1063783409030032
https://doi.org/10.1134/s1063783409030032
Publikováno v:
European Science Review. :148-149
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f051ba0d77834bfcca623c35378dbc
https://doi.org/10.20534/esr-16-7.8-148-149
https://doi.org/10.20534/esr-16-7.8-148-149
Publikováno v:
Semiconductor Science and Technology. 16:543-547
Formation of A-centres and divacancies in silicon p+-n-n+ structures was investigated for 4 MeV electron irradiation in the low-intensity range of 1011-5×1012 cm-2 s-1. It is shown that the introduction rates of both A-centres and divacancies increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::838ad0801e21bd0fde7a6b98b1fcd5c3
https://doi.org/10.1088/0268-1242/16/7/303
https://doi.org/10.1088/0268-1242/16/7/303
Autor:
R. A. Muminov, A. A. Sulaimanov, M. Karimov, L. S. Sandler, A. R. Sattiev, A. Z. Rakhmatov, Sh. Makhkamov, Sh. A. Makhmudov, N. A. Tursunov
Publikováno v:
Applied Solar Energy. 46:298-300
The possibility of creating photoresistors from silicon of the n-type with specific resistance of 100–170 Ω cm using irradiation by fast neutrons of a nuclear reactor is shown. An optimal regime is found for silicon radiation-heat treatment to obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc07e3f4dc17681b347b521210b64a7
https://doi.org/10.3103/s0003701x10040134
https://doi.org/10.3103/s0003701x10040134