Zobrazeno 1 - 5
of 5
pro vyhledávání: '"N. A. Tal'nishnih"'
Autor:
D. S. Poloskin, Anton E. Chernyakov, E. V. Gushchina, V. V. Emtsev, E. I. Shabunina, Vitali V. Kozlovski, A. P. Kartashova, A. G. Oganesyan, A. A. Zybin, Alexander Usikov, V. V. Lundin, A. V. Saharov, V. N. Petrov, N. A. Tal'nishnih, N. M. Shmidt, M. F. Kudoyarov
Publikováno v:
Semiconductors. 52:942-949
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b3df94136cd115b6621486d6611c89
https://doi.org/10.1134/s1063782618070072
https://doi.org/10.1134/s1063782618070072
Autor:
E. I. Shabunina, N. A. Tal'nishnih, P. B. Lagov, Alexander Y. Polyakov, N. B. Smirnov, L. A. Alexanyan, N. M. Shmidt, Ivan Shchemerov, Stephen J. Pearton, Yu. S. Pavlov
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P323-P328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26076c562c085a994644177bee6cad5a
https://doi.org/10.1149/2.0211806jss
https://doi.org/10.1149/2.0211806jss
Autor:
A. V. Sakharov, Andrey E. Nikolaev, N. A. Tal'nishnih, N. M. Shmidt, V.N. Petrov, E.I. Shabunina, E. V. Gushchina, Anton E. Chernyakov
Publikováno v:
Journal of Crystal Growth. 520:82-84
AFM study of surface morphology in green LED structures and multifractal analysis allowed us to reveal a relationship between step-meandering morphology quantitatively characterized by a multifractal parameter, the degree of disorder, and features of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abf4eb50e3d61ac80e6424b986f953e8
https://doi.org/10.1016/j.jcrysgro.2019.05.015
https://doi.org/10.1016/j.jcrysgro.2019.05.015
Autor:
N. M. Shmidt, Ivan Shchemerov, Alexander Y. Polyakov, S. A. Tarelkin, N. B. Smirnov, L. A. Alexanyan, E. I. Shabunina, In Hwan Lee, N. A. Tal'nishnih, Stephen J. Pearton
Publikováno v:
Journal of Applied Physics. 125:215701
Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance–voltage profiles with temperature that make it dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::308bf0e1b774d3531e6dd61f58db3ebc
https://doi.org/10.1063/1.5093723
https://doi.org/10.1063/1.5093723
Autor:
Han Su Cho, In Hwan Lee, Ivan Shchemerov, N. B. Smirnov, Alexander Y. Polyakov, S. I. Didenko, N. A. Tal'nishnih, R. A. Zinovyev, P. B. Lagov, N. M. Shmidt, Stephen J. Pearton, Sung-Min Hwang, E. I. Shabunina
Publikováno v:
physica status solidi (a). 214:1700372
Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e771907280b20d5a19a21cd3bd91956
https://doi.org/10.1002/pssa.201700372
https://doi.org/10.1002/pssa.201700372