Zobrazeno 1 - 6
of 6
pro vyhledávání: '"N. A. Orlikovskii"'
Autor:
A. V. Myakon’kikh, O. P. Guschin, A. A. Tatarintsev, K. Yu. Kuvaev, E. S. Gornev, Konstantin V. Rudenko, N. A. Orlikovskii
Publikováno v:
Russian Microelectronics. 47:323-331
The processes of plasma etching of stack layers to form a structure of a metal gate of a nanoscale transistor with a dielectric with a high level of dielectric permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6958bf596b9b1b5a7da9d4485c05b630
https://doi.org/10.1134/s1063739718050062
https://doi.org/10.1134/s1063739718050062
Publikováno v:
Technical Physics. 60:1515-1518
A new method for determining the thickness of opaque films on bulk substrates is considered in the nanometer size range. The method is based on analysis and measurements of the energy spectra of back-scat- tered electrons. The thicknesses of local fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac000c1c78b92b1a59514d882ebb3e45
https://doi.org/10.1134/s1063784215100205
https://doi.org/10.1134/s1063784215100205
Publikováno v:
Technical Physics. 58:447-454
A new version of the toroidal electron spectrometer installed in a scanning electron microscope is described. The new instrument has made it possible to carry out fundamental and applied research in the field of local nondestructive inspection of mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9175d94d1b10879055e4c8a894d7a71
https://doi.org/10.1134/s1063784213030109
https://doi.org/10.1134/s1063784213030109
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 76:959-964
The inverse problem of reconstructing the true spectrum of electrons backscattered from massive and layered targets with allowance for the spread function of the toroidal sector energy analyzer and for the response function of the spectrometer’s el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48fb34ea14cd363bd382a0e91152aeeb
https://doi.org/10.3103/s1062873812090109
https://doi.org/10.3103/s1062873812090109
Autor:
S. A. Ditsman, R. A. Sennov, N. A. Orlikovskii, A. F. Aleksandrov, E. I. Rau, F. A. Luk’yanov
Publikováno v:
Russian Microelectronics. 39:303-312
An electron-beam diagnostic complex based on a scanning electron microscope is described. The complex allows the nondestructive contactless studies of microelectronic device structures and architectures and the simultaneous determination of the distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f51f5dd9d9d806ceece45f92b0d6de15
https://doi.org/10.1134/s1063739710050021
https://doi.org/10.1134/s1063739710050021
Publikováno v:
Instruments and Experimental Techniques. 53:581-590
A method of microtomography of layered microstructures during detection of backscattered electrons in a scanning electron microscope is described. This method is based on the formation of layer-by-layer images hidden under the surfaces of microstruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7b7472e8d029064ef54575376d6cac
https://doi.org/10.1134/s0020441210040202
https://doi.org/10.1134/s0020441210040202