Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N. A. Kuldin"'
Autor:
A. B. Cheremisin, N. A. Kuldin, Alexander M. Grishin, Alexander Pergament, Andrey Velichko, Vadim Putrolaynen
We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f71b9d4a7c2b5a42fcd22912aed14e48
http://arxiv.org/abs/2001.03054
http://arxiv.org/abs/2001.03054
Autor:
A. B. Cheremisin, N. A. Kuldin
Publikováno v:
Technical Physics Letters. 44:946-948
We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07cab91038b3c44d2060be726f63096a
https://doi.org/10.1134/s1063785018100188
https://doi.org/10.1134/s1063785018100188
Autor:
Alexander Pergament, Andrei Velichko, N. A. Kuldin, G. B. Stefanovich, V. V. Putrolainen, P. P. Boriskov
Publikováno v:
Technical Physics Letters. 41:672-675
We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si-SiO2-V2O5-Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87869177364c0e72a36983524e77f512
https://doi.org/10.1134/s1063785015070287
https://doi.org/10.1134/s1063785015070287
Publikováno v:
Journal of Experimental Physics. 2014:1-6
We report on the experimental study of electrical instabilities in thin film structures on the basis of molybdenum oxides. Thin films of molybdenum oxide are obtained by thermal vacuum evaporation and anodic oxidation. The results of X-ray structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8edc510fd71dcd3263e40af2dcff97e3
https://doi.org/10.1155/2014/951297
https://doi.org/10.1155/2014/951297
Autor:
Andrey Velichko, Maksim Belyaev, P. P. Boriskov, V. V. Putrolaynen, G. B. Stefanovitch, N. A. Kuldin
Publikováno v:
Journal on Selected Topics in Nano Electronics and Computing. 1:26-30
Abstract— The paper presents simulation results of the field control of phase metal-insulator transition in transistor structures based on vanadium dioxide. The calculations of the field and the electron density in the space charge region in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393e3bfefc1bc7010144b513cce3f3ac
https://doi.org/10.15393/j8.art.2014.3045
https://doi.org/10.15393/j8.art.2014.3045
Publikováno v:
ISRN Condensed Matter Physics. 2013:1-6
The problem of metal-insulator transition is considered. It is shown that the Mott criterion aB(nc)1/3≈0.25 is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c656ee69e488d3366955ea13fe5e8923
https://doi.org/10.1155/2013/960627
https://doi.org/10.1155/2013/960627
Publikováno v:
Journal of Physics and Chemistry of Solids. 71:874-879
We measured S-shaped I–V characteristics of vanadium dioxide in a wide temperature range (15–340 K). The proposed switching mechanism in materials with metal–insulator transition (MIT) is based on an electronically induced MIT occurring in cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf1be295bb42b9cda82456331345090
https://doi.org/10.1016/j.jpcs.2010.03.032
https://doi.org/10.1016/j.jpcs.2010.03.032
Publikováno v:
Technical Physics. 55:247-250
Experimental data for the effect of memory electrical switching in a metal—oxide—metal structure based on hydrated vanadium dioxide obtained by the method of anodic—cathodic polarization are discussed. A model that assumes the key role of the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::433fccbf3f53a515ae07eb53107da8a0
https://doi.org/10.1134/s1063784210020143
https://doi.org/10.1134/s1063784210020143
Publikováno v:
Technical Physics Letters. 31:520-523
We have numerically modeled the ac current passage through a Si-SiO2-VO2 structure, which is known to exhibit switching with an S-like characteristic due to a metal-semiconductor phase transition in vanadium dioxide. It is shown that the dynamics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9d297fc2cc0b9e632089dda0d18314
https://doi.org/10.1134/1.1969787
https://doi.org/10.1134/1.1969787
Publikováno v:
Technical Physics Letters. 29:507-509
The dynamic current-voltage characteristics of a Si-SiO2-VO2 structure exhibiting the switching effect have been studied. It is demonstrated that the switching dynamics in this system can be controlled either by applying a bias voltage to the silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22e818ef34871f5e7dd5e91f72dcbb2a
https://doi.org/10.1134/1.1589573
https://doi.org/10.1134/1.1589573