Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N. A. Khvalkovskiy"'
Autor:
S. K. Paprotskiy, I. V. Altukhov, A. N. Vinichenko, Miron S. Kagan, I. S. Vasil’evskii, N. A. Khvalkovskiy, S. E. Dizhur
Publikováno v:
Journal of Communications Technology and Electronics. 66:1385-1387
The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b9bd7e6084d745a533a5fb42d68c5d6
https://doi.org/10.1134/s1064226921440017
https://doi.org/10.1134/s1064226921440017
Autor:
Roland Teissier, Alexei N. Baranov, I. V. Altukhov, A. A. Usikova, Miron S. Kagan, I. A. Kohn, N. D. Il’inskaya, N. A. Khvalkovskiy, S. K. Paprotskiy
Publikováno v:
Journal of Communications Technology and Electronics
Journal of Communications Technology and Electronics, MAIK Nauka/Interperiodica, 2019, 64 (10), pp.1140-1143. ⟨10.1134/S1064226919090158⟩
Journal of Communications Technology and Electronics, MAIK Nauka/Interperiodica, 2019, 64 (10), pp.1140-1143. ⟨10.1134/S1064226919090158⟩
—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee18fecd1d78344d0c39f69d4aa2f099
https://doi.org/10.1134/s1064226919090158
https://doi.org/10.1134/s1064226919090158
Autor:
Miron S. Kagan, I. S. Vasil’evskii, N. A. Khvalkovskiy, I. V. Altukhov, A. N. Vinichenko, S. K. Paprotskiy
Publikováno v:
EPJ Web of Conferences, Vol 195, p 02002 (2018)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da3f9ba6541963389fc36c6c274bc765
https://doaj.org/article/9d3a7d8f79bf41cbb15429504e061d73
https://doaj.org/article/9d3a7d8f79bf41cbb15429504e061d73
Autor:
S. K. Paprotskiy, N. A. Khvalkovskiy, Miron S. Kagan, A. N. Vinichenko, I. S. Vasil’evskii, I. V. Altukhov
Publikováno v:
EPJ Web of Conferences, Vol 195, p 02008 (2018)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29fe9c083d815114384c375397ad051a
https://doaj.org/article/7ecc6814e3b34ec4a65996b9a290e890
https://doaj.org/article/7ecc6814e3b34ec4a65996b9a290e890
Autor:
I. S. Vasil’evskii, I. V. Altukhov, S. K. Paprotskiy, Miron S. Kagan, N. A. Khvalkovskiy, A. N. Vinichenko, S. E. Dizhur
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 475:012032
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1743a4ba9801eac2a49f9d09a9ae700
https://doi.org/10.1088/1757-899x/475/1/012032
https://doi.org/10.1088/1757-899x/475/1/012032
Autor:
N. A. Khvalkovskiy, I. S. Vasil’evskii, I. V. Altukhov, A. N. Vinichenko, S. E. Dizhur, S. K. Paprotskiy, Miron S. Kagan
Publikováno v:
Физика и техника полупроводников. 52:472
AbstractElectronic transport in short-period GaAs/AlAs superlattices with resonant cavities was studied at room temperature. The evolution of tunneling current at forward and backward bias sweep was investigated. The step-like decrease in current at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c04931c46ff32986e073a2aa52a28000
https://doi.org/10.21883/ftp.2018.04.45821.10
https://doi.org/10.21883/ftp.2018.04.45821.10
Autor:
Miron S. Kagan, V. G. Ralchenko, S. K. Paprotskiy, I. V. Altukhov, R. A. Khmel’nitskiy, N. A. Khvalkovskiy, Andrey Bolshakov, N. B. Rodionov
Publikováno v:
Scopus-Elsevier
Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ∼ 5⋅105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4b3e2ca6dea742ee8926d30299d5364
http://www.scopus.com/inward/record.url?eid=2-s2.0-85100189802&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85100189802&partnerID=MN8TOARS
Autor:
Altukhov, I. V., Kagan, M. S., Paprotskiy, S. K., Khvalkovskiy, N. A., Rodionov, N. B., Bol'shakov, A. P., Ral'chenko, V. G., Khmel'nitskiy, R. A.
Publikováno v:
Low Temperature Physics; Jan2021, Vol. 47 Issue 1, p75-78, 4p
Autor:
Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Khvalkovskiy, N. A., Paprotskiy, S. K., Vasil'evskii, I. S., Vinichenko, A. N.
Publikováno v:
Journal of Communications Technology & Electronics; Dec2021, Vol. 66 Issue 12, p1385-1387, 3p
Autor:
Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Paprotskiy, S. K., Khvalkovskiy, N. A., Il'inskaya, N. D., Usikova, A. A., Baranov, A. N., Teissier, R.
Publikováno v:
Journal of Communications Technology & Electronics; Jul2022, Vol. 67 Issue 7, p882-883, 2p