Zobrazeno 1 - 2
of 2
pro vyhledávání: '"N. A. Kalyuzhnyĭ"'
Autor:
S. A. Mintairov, N. Kh. Timoshina, N. A. Kalyuzhnyĭ, V. M. Andreev, V. M. Lantratov, M. Z. Shvarts
Publikováno v:
Semiconductors. 41:727-731
Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary Ga x In1−x P and Al x In1−x P alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3da04b49eb3bd98006be39bbc7679b4
https://doi.org/10.1134/s106378260706022x
https://doi.org/10.1134/s106378260706022x
Autor:
L. V. Katsoev, N. M. Shmidt, V. N. Mdivani, A. T. Gorelenok, O. V. Titkova, A. A. Tomasov, V.M. Lantratov, S. S. Shmelev, N. A. Kalyuzhnyĭ, É. A. Il’ichev, Pavel N. Brunkov, S. A. Mintarov, V. V. Katsoev, Yu. M. Zadiranov
Publikováno v:
Technical Physics Letters. 32:987-989
It is shown that p-i-n detectors of α particles can be created using high-ohmic (n ∼ 1012 cm−3) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n ∼ 1015 cm−3) initial material wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424cb4474d4a86c4778461c257b6d48e
https://doi.org/10.1134/s1063785006110241
https://doi.org/10.1134/s1063785006110241