Zobrazeno 1 - 10
of 181
pro vyhledávání: '"N. A. Gordeev"'
Publikováno v:
Геодинамика и тектонофизика, Vol 9, Iss 3, Pp 771-800 (2018)
The article presents the results obtained by field tectonophysical methods applied to study tectonic stresses of the Northern Eurasia regions, including young and ancient platforms (West European, Timan–Pechora, Turan, West Siberian, East European,
Externí odkaz:
https://doaj.org/article/338125b47bc44c4fbbe8cac9e34ccf33
Autor:
A. N. Stashkov, A. P. Nichipuruk, E. A. Schapova, N. V. Gordeev, I. V. Vshivtsev, N. V. Kazantseva
Publikováno v:
Russian Journal of Nondestructive Testing. 59:54-61
Publikováno v:
Seismic Instruments. 58:S345-S355
Autor:
N. A. Gordeev, I. V. Bondar
Publikováno v:
Seismic Instruments. 58:244-255
Autor:
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, A. S. Dragunova, A. M. Nadtochiy, M. V. Maximov, N. Yu. Gordeev
Publikováno v:
Semiconductors. 56:139-144
Autor:
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, F. I. Zubov, M. V. Fetisova, M. V. Maximov, N. Yu. Gordeev
Publikováno v:
Semiconductors. 55:S67-S71
Autor:
A.E. Zhukov, E.I. Moiseev, A.M. Nadtochiy, N.A. Fominykh, K.A. Ivanov, I.S. Makhov, A.S. Dragunova, N.V. Kryzhanovskaya, F.I. Zubov, M.V. Maximov, S.A. Mintairov, Nikolay A. Kalyuzhnyy, Yu. M. Shernyakov, N. Yu. Gordeev
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
A. A. Serin, M. M. Kulagina, G. O. Kornyshov, Nikolay A. Kalyuzhnyy, A. S. Payusov, N. Yu. Gordeev, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, Sergey A. Mintairov, Yu. M. Shernyakov
Publikováno v:
Semiconductors. 55:333-340
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is show
Autor:
Mikhail V. Maximov, A. A. Serin, G. V. Voznyuk, A. S. Payusov, M. I. Mitrofanov, M. M. Kulagina, G. O. Kornyshov, N. Yu. Gordeev, V. P. Evtikhiev
Publikováno v:
Semiconductors. 54:1811-1813
We present an approach for the treatment of coupled-ridge lasers using focused ion beam (FIB) etching. We show experimentally that the FIB etching allows post-processing lateral mode tuning without deterioration of the main laser parameters.
Publikováno v:
Semiconductors. 53:1405-1408
The construction of a semiconductor laser with a stripe waveguide is proposed, the geometry of which can make it possible to obtain radiation similar to that of a phase-locked laser array. The requirements for the parameters of the laser quasi-array