Zobrazeno 1 - 10
of 20
pro vyhledávání: '"N. A. Davletkil'deev"'
Autor:
V. E. Roslikov, N. A. Davletkil’deev, V. V. Bolotov, E. V. Knyazev, K. E. Ivlev, I. V. Ponomareva, V. E. Kan
Publikováno v:
Semiconductors. 51:49-53
The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db0a770b77a9ad99624e8e3a3c650c1
https://doi.org/10.1134/s1063782617010043
https://doi.org/10.1134/s1063782617010043
Autor:
E. V. Knyazev, S. N. Nesov, N. A. Davletkil’deev, V. E. Kan, V. V. Bolotov, V. A. Sachkov, P. M. Korusenko, S. N. Povoroznyuk, V. E. Roslikov, Yu. A. Stenkin, I. V. Ponomaryova
Publikováno v:
AIP Conference Proceedings.
The review is devoted to the current state of researches in the field of nanostructures and materials science - nanocomposite materials based on multiwalled carbon nanotubes (MWCNT). Methods of formation, methods of functionalization, physical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1555b85b893dcfdf7ed7c22ff18ba42e
https://doi.org/10.1063/1.5051930
https://doi.org/10.1063/1.5051930
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:244-247
Damages on single-crystal silicon under the action of a powerful proton-carbon beam of nanosecond duration have been studied. The formation of various surface structures at a beam current density of less than 100 A/cm2 has been observed. The morpholo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6482191a8ae1212a712984f322045ff4
https://doi.org/10.1134/s1027451012030123
https://doi.org/10.1134/s1027451012030123
Publikováno v:
Technical Physics. 56:1593-1598
The layer-by-layer distribution of components in a porous silicon-tin oxide nanocomposite produced by the following three methods is studied by spectroscopic ellipsometry: chemical vapor deposition, atomic layer deposition, and magnetron sputtering.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8cedeeee8136eb9d3b097e9637a6374
https://doi.org/10.1134/s1063784211110065
https://doi.org/10.1134/s1063784211110065
Autor:
A. G. Kudashov, I. V. Ponomareva, V. E. Kan, N. A. Davletkil’deev, O. V. Krivozubov, V. V. Bolotov, Alexander V. Okotrub
Publikováno v:
Inorganic Materials: Applied Research. 1:110-114
The morphological, structural, and electrophysical properties of the layers of nitrogen-containing carbon nanotubes synthesized by pyrolysis of acetonitrile on a silicon oxide-silicon substrate with a Ni layer catalyst, Fe volumetric catalyst obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf5f2a017f0d8cbedd71fc5cf7ef931
https://doi.org/10.1134/s2075113310020073
https://doi.org/10.1134/s2075113310020073
Autor:
S. S. Sigaeva, D. A. Shlyapin, N. A. Davletkil’deev, P. G. Tsyrul’nikov, N. N. Voitenko, V. I. Vershinin, G. B. Kuznetsov, S. L. Kanashenko, T. S. Dorofeeva
Publikováno v:
Russian Journal of Applied Chemistry. 82:307-311
The pretreatment of Fechral support for preparing a methane pyrolysis catalyst was studied. The Fechral support after high-temperature (1000°C) treatment in air was examined by atomic force microscopy, scanning electron microscopy with chemical anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443414078249e2c2e14ddab6ebdc3b5d
https://doi.org/10.1134/s1070427209020268
https://doi.org/10.1134/s1070427209020268
Publikováno v:
Semiconductors. 43:92-95
The method of atomic-force microscopy is used to study the morphology of the surface of porous silicon layers formed on the p-Si substrate and obtained by anodic etching in an electrolyte with addition of free halogens (bromine, iodine) and potassium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a024e0a6fef2958398f072e232e1a5e0
https://doi.org/10.1134/s1063782609010187
https://doi.org/10.1134/s1063782609010187
Publikováno v:
Physics of the Solid State. 50:244-249
The micromechanical properties of Te-doped GaAs single crystals with free carrier density n 0 = 1017−5 × 1018 cm−3 were studied. The obtained data are as follows: the nonmonotonic concentration dependences of the microhardness, the lengths of di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a97e88aff99805c9008c8aca82c44ee
https://doi.org/10.1134/s1063783408020066
https://doi.org/10.1134/s1063783408020066
Publikováno v:
Technical Physics Letters. 39:147-149
The formation of wavy microstructures under the action of a nanosecond pulsed high-power ion beam on the surface of single-crystalline silicon covered with intrinsic oxide layers of various thickness has been studied. Morphological features of the ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd83e1bbf617f142f70284d43e731c4
https://doi.org/10.1134/s1063785013020090
https://doi.org/10.1134/s1063785013020090
Publikováno v:
Semiconductors. 36:385-389
Spectra of edge photoluminescence (PL) at 300 K have been studied in a set of Czochralski-grown Te-doped GaAs single crystals with a free carrier density of n 0=1017–1019 cm−3. The carrier density dependences of the chemical potential and band ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2048e3d2cf34a1924d2c6d1d18b11060
https://doi.org/10.1134/1.1469184
https://doi.org/10.1134/1.1469184