Zobrazeno 1 - 10
of 20
pro vyhledávání: '"N. A. Bojarczuk"'
Publikováno v:
Semiconductor Science and Technology. 22:S1-S4
In this paper we report on the fabrication of all-epitaxial ultrathin germanium-on-crystalline lanthanum?yttrium-oxide field effect transistors. The oxide is lattice matched to Si (1?1?1) and has a dielectric constant of ~18. The transistors show amb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cdfc2e04c4443744b7eb65f03b80e5
https://doi.org/10.1088/0268-1242/22/1/s01
https://doi.org/10.1088/0268-1242/22/1/s01
Autor:
Lawrence A. Clevenger, L. Stolt, N. A. Bojarczuk, Cyril Cabral, James Mckell Edwin Harper, R. G. Schad, F. Cardone, Karen Holloway
Publikováno v:
Journal of Applied Physics. 73:300-308
We demonstrate that depositing Ta diffusion barriers under ultra‐high vacuum conditions without in situ oxygen dosing allows for variations both in microstructure and in the concentration of chemical impurities that severely degrade barrier perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319d57898675bd36068c0742b8bb2cd3
https://doi.org/10.1063/1.353904
https://doi.org/10.1063/1.353904
Publikováno v:
Applied Physics Letters. 75:463-465
We demonstrate the selective area growth of gallium nitride on patterned Si(111)/GaN/SiO2 wafers by metalorganic molecular beam epitaxy using triethyl gallium as a Ga source. We show that such selective area deposition may be used to grow isolated mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796348f1429f03248ce6a61471907f9b
https://doi.org/10.1063/1.124409
https://doi.org/10.1063/1.124409
Publikováno v:
Journal of Applied Physics. 82:4126-4128
This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfab20e630fbdd5020bef5edeaf4126f
https://doi.org/10.1063/1.365725
https://doi.org/10.1063/1.365725
Publikováno v:
Applied Physics Letters. 71:1685-1687
We examine the epitaxial incorporation behavior of the volatile p-type dopant Mg at high growth temperatures during the molecular beam epitaxy of GaN on the [0001] surface, and report interesting doping behavior. The net Mg incorporation is independe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1fbfa7e41f5cc480ceaf3f1177b4e1
https://doi.org/10.1063/1.119793
https://doi.org/10.1063/1.119793
Publikováno v:
Applied Physics Letters. 69:2879-2881
We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2±0.2 eV is measured for Ga adatoms. Porous columnar features in the GaN mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7e93641080ab338d90e7692f28c3f8
https://doi.org/10.1063/1.117349
https://doi.org/10.1063/1.117349
Publikováno v:
Applied Physics Letters. 67:2022-2024
Interface recombination in GaAs at the GaAs/AlAs interface has been investigated before and after selective ‘‘wet oxidation’’ of the AlAs layer. Time‐resolved photoluminescence of the band‐edge GaAs emission has been used to characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaab34950add68b0c4894e88c0632c58
https://doi.org/10.1063/1.114774
https://doi.org/10.1063/1.114774
Publikováno v:
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.
The threshold of vertical cavity lasers has recently been greatly reduced by replacing proton implantation with selective "wet oxidation" of the AlAs layers in Bragg reflectors to provide lateral confinement of both the electrical current and the opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ecddf8143b7499cfd6f61261fb7888
https://doi.org/10.1109/leos.1995.484519
https://doi.org/10.1109/leos.1995.484519
Publikováno v:
Journal of Applied Physics. 73:6124-6126
Measurements of the polar Kerr rotation and optical coercivity as a function of photon energy have been made on ≊2 μm thick ThMn12‐type crystalline sputtered films of Sm(Fe,Ti)12. The optical coercivity for a Ti containing (222) textured film wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37674d7c04151219c2a89d4f17dd9846
https://doi.org/10.1063/1.352722
https://doi.org/10.1063/1.352722
Publikováno v:
Applied Physics Letters. 95:064103
Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n-type and p-type silicon wafers, using the oxidation of isopropanol as a mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0f665f230d9e3b318551dd0acb3b50
https://doi.org/10.1063/1.3196314
https://doi.org/10.1063/1.3196314