Zobrazeno 1 - 10
of 34
pro vyhledávání: '"N. A. Bogoslovskii"'
Autor:
V. G. Mizyak, A. Yu. Yurova, A. V. Shlyaeva, Evgeny Volodin, R. Yu. Fadeev, D. B. Kiktev, I. N. Ezau, Vladimir V. Shashkin, J.-F. Geleyn, T. V. Krasjuk, R. M. Vil’fand, Mikhail A. Tolstykh, N. N. Bogoslovskii, S. V. Kostrykin
Publikováno v:
Russian meteorology and hydrology. 2015. Vol. 40, № 6. P. 374-382
The global hydrodynamic atmosphere model SL-AV is applied for operational mediumrange weather forecast and as a component of the probabilistic long-range forecast system. The review of the previous development of the model is presented and the model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9488df918ae7d24f7f61eaa9955edb0
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000520384
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000520384
Publikováno v:
Pharmaceutical Chemistry Journal. 28:589-596
ROUTES TO OPTIMIZATION OF PREVITAMIN D PHOTOSYNTHESIS USING IRRADIATION BY A SUNLAMP I. P. Terenetskaya, N. A. Bogoslovskii, L. N. Vysotskii, and F. I. Luknitskii UDC 615.141:543.422:577.161.2 A key step in the technology of vitamin D (D) synthesis i
Publikováno v:
Pharmaceutical Chemistry Journal. 27:797-803
Publikováno v:
ChemInform. 26
Publikováno v:
Pharmaceutical Chemistry Journal. 16:851-855
Autor:
T. A. Kisel'nikova, Blazheevich Nv, S. V. Sokolova, V. B. Spirichev, Alekseeva Ia, N. A. Bogoslovskii
Publikováno v:
Pharmaceutical Chemistry Journal. 18:373-378
Publikováno v:
Pharmaceutical Chemistry Journal. 8:372-375
Publikováno v:
Pharmaceutical Chemistry Journal. 13:494-497
Publikováno v:
Journal of Applied Spectroscopy. 22:797-800
Autor:
Arkady V. Yakimov, N. N. Bogoslovskii
Publikováno v:
Radiophysics and Quantum Electronics. 29:510-517
A model is developed in which fluctuations in the following parameters are considered as sources of flicker noise: differential emitter junction resistances, corresponding to diffusion and recombination components of the emitter current; leakage resi