Zobrazeno 1 - 10
of 120
pro vyhledávání: '"N. A. Bert"'
Publikováno v:
Crystallography Reports. 66:682-686
The microstructure of gallium nitride epitaxial layers synthesized by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapour deposition (MOCVD) on nanoprofiled NP‒Si(001) substrates with and without an intermediate 3C‑SiC layer has b
Autor:
A. V. Ershov, D. N. Goryachev, E. V. Beregulin, M. A. Elistratova, Olga M. Sreseli, N. A. Bert, V. N. Nevedomskii
Publikováno v:
Semiconductors. 54:1315-1319
The properties of multilayer α-Si(Ge)/SiO2 nanostructures deposited onto p-Si substrates and annealed at various temperatures are investigated. The total nanolayer thickness is no larger than 300–350 nm. It is found that despite the formation of c
Autor:
K��tyuk, Eszter, Urb��n, R��bert, Hende, Borb��la, Richman, Mara, Magi, Anna, Kir��ly, Orsolya, Barta, Csaba, Griffiths, Mark D, Potenza, Marc N, Badgaiyan, Rajendra D, Blum, Kenneth, Demetrovics, Zsolt
Supplemental material, sj-docx-1-jop-10.1177_02698811211069102 for Development and validation of the Reward Deficiency Syndrome Questionnaire (RDSQ-29) by Eszter K��tyuk, R��bert Urb��n, Borb��la Hende, Mara Richman, Anna Magi, Orsoly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baca6f20b14074aa612dba9a0bdd5d10
Autor:
I. N. Yassievich, A. N. Yablonsky, V. N. Nevedomskii, Olga M. Sreseli, Aleksey Nezhdanov, N. A. Bert, A. I. Lihachev, Aleksandr Mashin, A. V. Ershov, Boris A. Andreev
Publikováno v:
Semiconductors. 54:181-189
Structures with Ge/Si nanoparticles (quantum dots) in an aluminum-oxide matrix are of interest due to the combination of two basic semiconductors and the use of a matrix with a high permittivity and strong oxygen–metal bonding. In this study, multi
Autor:
Reinhardt, Melinda, K��k��nyei, Gy��ngyi, Rice, Kenneth G., Drubina, Bogl��rka, Urb��n, R��bert
Additional file 1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::024dfec9c181b339db20240ca79c8e73
Autor:
Reinhardt, Melinda, K��k��nyei, Gy��ngyi, Rice, Kenneth G., Drubina, Bogl��rka, Urb��n, R��bert
Additional file 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13af7a3fc5aaed0c3643dc7f737bcf66
Autor:
G. E. Cirlin, A. D. Bouravleuv, N. A. Bert, Konstantin P. Kotlyar, Demid A. Kirilenko, I. P. Soshnikov
Publikováno v:
Semiconductors. 52:605-608
The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmissi
Autor:
Nikita A. Pikhtin, N. A. Bert, I. P. Soshnikov, Ya. V. Lubyanskiy, Demid A. Kirilenko, K. P. Kotlyar, A. D. Bondarev, V. V. Zolotarev, I. S. Tarasov
Publikováno v:
Semiconductors. 52:184-188
In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized Al
Publikováno v:
Semiconductors. 51:1101-1105
Indium-antimonide quantum dots are for the first time formed on the surface of an epitaxial In0.25GaAsSb layer isoperiodic to a GaSb(001) substrate by liquid-phase epitaxy in the range of temperatures T = 450–467°C. Transmission electron microscop
Publikováno v:
Journal of Physics: Conference Series. 1697:012119
The technique for determination of strain and elemental composition distribution across the graded layer in heterostructures by means of selected area electron diffraction in transmission electron microscope (TEM) is proposed. The approach accounts f