Zobrazeno 1 - 10
of 41
pro vyhledávání: '"N. A. Abdullayev"'
Autor:
M. Garnica, M. M. Otrokov, P. Casado Aguilar, I. I. Klimovskikh, D. Estyunin, Z. S. Aliev, I. R. Amiraslanov, N. A. Abdullayev, V. N. Zverev, M. B. Babanly, N. T. Mamedov, A. M. Shikin, A. Arnau, A. L. Vázquez de Parga, E. V. Chulkov, R. Miranda
Publikováno v:
npj Quantum Materials, Vol 7, Iss 1, Pp 1-9 (2022)
Abstract We study the surface crystalline and electronic structures of the antiferromagnetic topological insulator MnBi2Te4 using scanning tunneling microscopy/spectroscopy (STM/S), micro(μ)-laser angle-resolved photoemission spectroscopy (ARPES), a
Externí odkaz:
https://doaj.org/article/fa089efe853e47c283254d15cf62dba8
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 13, Iss 1, Pp 45-49 (2013)
Critical analysis of the known method of signal arrival time difference on the basis of UAV is carried out. Research results show the possibility of this method optimization and further synthesis of the new one. Optimization of the known search and t
Externí odkaz:
https://doaj.org/article/dc494a53a9324708a2117051de704b68
Autor:
I. A. Mamedova, Z. A. Jahangirli, E. H. Alizade, T. G. Kerimova, T. G. Mammadov, N. A. Abdullayev
Publikováno v:
Physics of Wave Phenomena. 30:306-313
Autor:
R. Q. Veliyev, N. A. Abdullayev, I. R. Amiraslanov, I. A. Mamedova, D. A. Mamedov, Z. I. Badalova, Sh. K. Gudavasov, S. A. Nemov
Publikováno v:
Semiconductors. 56:32-37
Autor:
Sh. K. Qudavasov, N. A. Abdullayev, J. N. Jalilli, Z. I. Badalova, I. A. Mamedova, S. A. Nemov
Publikováno v:
Semiconductors. 55:985-988
Autor:
N. A. Abdullayev, Kh. V. Aliguliyeva, V. N. Zverev, Z. S. Aliev, I. R. Amiraslanov, M. B. Babanly, Z. A. Jahangirli, Ye. N. Aliyeva, Kh. N. Akhmedova, T. G. Mammadov, M. M. Otrokov, A. M. Shikin, N. T. Mamedov, E. V. Chulkov
Publikováno v:
Physics of the Solid State. 63:1120-1125
Autor:
S. R. Azimova, Y. I. Aliyev, Sakin H. Jabarov, M. N. Mirzayev, Vladimir A. Skuratov, N. M. Abdullayev, A. K. Mutali
Publikováno v:
Journal of the Korean Physical Society. 77:240-246
The thermal propeties of a Sb2Te3 sample irradiated with high-energy swift heavy ions has been studied, and the resuits are reported in the presented work. Antimony telluride samples were irradiated with 167-MeV 131Xe ions at intensities of 5.0 × 10
Autor:
Yegana Aliyeva, R. R. Guseynov, Vladimir N. Zverev, Kh. V. Aliguliyeva, N. A. Abdullayev, Gregory Belenky, Gela Kipshidze, Kh. N. Ahmadova, Nazim Mamedov, V. A. Tanriverdiyev, E. G. Alizade
Publikováno v:
Semiconductors. 53:906-910
The electrical and galvanomagnetic properties of unrelaxed heteroepitaxial InAs1 –xSbx structures (x = 0.43 and 0.38) in a wide temperature range of 5–300 K and magnetic fields up to 8 T are studied. From the thermal-activation dependence of the
Publikováno v:
American Journal of Biomedical Science & Research. 3:111-117
Autor:
Sergey A. Nemov, S. Sh. Gahramanov, Nazim Mamedov, Kh. V. Aliguliyeva, Z. I. Badalova, G. H. Azhdarov, N. A. Abdullayev
Publikováno v:
Semiconductors. 53:291-295
The temperature dependences of the Raman-active frequencies $$E_{g}^{2}$$ , $$A_{{1g}}^{2}$$ in layered Bi2Se3 single crystals are studied. The contribution of the thermal expansion to a temperature variation in the frequencies is determined. The dec