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Akademický článek

Lasing in strained germanium microbridges

Autor: F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg

Publikováno v: Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)

Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum eff

Externí odkaz: https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180

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Akademický článek

Investigation of lasing in highly strained germanium at the crossover to direct band gap

Autor: F. T. Armand Pilon, Y-M. Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg

Publikováno v: Physical Review Research, Vol 4, Iss 3, p 033050 (2022)

Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integratio

Externí odkaz: https://doaj.org/article/0aa19fe0b7e04df7bffa2fa518658e9b

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Akademický článek

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In-Situ Transmission Electron Microscopy Imaging of Aluminum Diffusion in Germanium Nanowires for the Fabrication of Sub-10 nm Ge Quantum Disks

Autor: Alois Lugstein, Masiar Sistani, Pascal Gentile, Minh Anh Luong, Eric Robin, B. Fernandez, M. den Hertog, N. Pauc, Maria Spies

Publikováno v: ACS Applied Nano Materials
ACS Applied Nano Materials, 2020, 3 (2), pp.1891-1899. ⟨10.1021/acsanm.9b02564⟩

International audience; The thermal activated solid state reaction forming aluminum–germanium nanowire (NW) heterostructures is a promising system as very sharp and well-defined one-dimensional contacts can be created between a metal and a semicond

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44c24e3e3dc757ab10b7c987e63d9c1c
https://doi.org/10.1021/acsanm.9b02564

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Room temperature optically pumped GeSn microdisk lasers

Autor: J. Chrétien, Q. M. Thai, M. Frauenrath, L. Casiez, A. Chelnokov, V. Reboud, J. M. Hartmann, M. El Kurdi, N. Pauc, V. Calvo

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2022, 120 (5), pp.051107. ⟨10.1063/5.0074478⟩

International audience; GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3:27MWcm2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d95522775e7a2348e016e4d53f84364c
https://hal.science/hal-04023342

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Steady state lasing in strained germanium microbridges as fundamental measure for the crossover to direct band gap

Autor: F. T. Armand Pilon, Y-M Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J.M. Hartmann, A. Chelnokov, J. Faist, H. Sigg

Publikováno v: 2021 IEEE 17th International Conference on Group IV Photonics (GFP).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::829a05f6568fb695228c3797dc9fcd0f
https://doi.org/10.1109/gfp51802.2021.9673870

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Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

Autor: L. Casiez, N. Bernier, J. Chrétien, J. Richy, D. Rouchon, M. Bertrand, F. Mazen, M. Frauenrath, A. Chelnokov, J. M. Hartmann, V. Calvo, N. Pauc, V. Reboud, P. Acosta Alba

Publikováno v: Journal of Applied Physics. 131:153103

We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c293e7eeb6a3932a6ea344d959a79fa0
https://doi.org/10.1063/5.0085107

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Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

Autor: A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, M. El Kurdi

Publikováno v: Optics Express. 30:3954

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27486f3fd98a0f0800348f08860a68a5
https://doi.org/10.1364/oe.449895

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Akademický článek

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Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method

Autor: Noël Magnea, V. Calvo, A. Besson, Pascal Gentile, Pierre Noé, O. Demichel, N. Pauc, Bassem Salem, Fabrice Oehler

Publikováno v: Nano Letters
Nano Letters, 2010, 10 (7), pp. 2323-2329
Nano Letters, American Chemical Society, 2010, 10 (7), pp. 2323-2329
HAL

The past decade has seen the explosion of experimental results on nanowires grown by catalyzed mechanisms. However, few are known on their electronic properties especially the influence of surfaces and catalysts. We demonstrate by an optical method h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97794e8677797d59575ee730709fed9
https://doi.org/10.1021/nl903166t

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