Zobrazeno 1 - 10
of 536 636
pro vyhledávání: '"N-type"'
Practical applications of thermoelectric (TE) materials are constrained by less developments of high-performance n-type materials compared to their p-type counterparts. Chalcopyrite CdSnAs2 is a promising n-type semiconductor for thermoelectrics from
Externí odkaz:
http://arxiv.org/abs/2412.00940
Autor:
Sewell, Kevin, Murphy-Armando, Felipe
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron
Externí odkaz:
http://arxiv.org/abs/2410.14478
Autor:
Liu, J., Xu, W., Xiao, Y. M., Ding, L., Li, H. W., Van Duppen, B., Milošević, M. V., Peeters, F. M.
Publikováno v:
Phys. Rev. B 109, 195418 (2024)
We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba spin-orbit c
Externí odkaz:
http://arxiv.org/abs/2411.01160
Autor:
Fan, Xinyi1,2 (AUTHOR), Liu, Jian1,2,3 (AUTHOR), Duan, Xiaozheng1 (AUTHOR), Li, Hongxiang3 (AUTHOR), Deng, Sihui1,2 (AUTHOR), Kuang, Yazhuo1,2 (AUTHOR), Li, Jingyu4 (AUTHOR), Lin, Chengjiang1,2 (AUTHOR), Meng, Bin1 (AUTHOR) mengbin@ciac.ac.cn, Hu, Junli4 (AUTHOR) hujl100@nenu.edu.cn, Wang, Shumeng1 (AUTHOR) wangshumeng@ciac.ac.cn, Liu, Jun1,2 (AUTHOR) liujun@ciac.ac.cn, Wang, Lixiang1,2 (AUTHOR)
Publikováno v:
Advanced Science. 7/3/2024, Vol. 11 Issue 25, p1-10. 10p.
Autor:
Hoshino, Koki1 (AUTHOR) 3cajm049@mail.u-tokai.ac.jp, Yamamoto, Hisatoshi1 (AUTHOR) 3cajm057@mail.u-tokai.ac.jp, Tamai, Ryota1 (AUTHOR) 4cajm042@tokai.ac.jp, Nakajima, Takumi1 (AUTHOR) 4cajm046@tokai.ac.jp, Miyake, Shugo2 (AUTHOR) shugo.miyake@setsunan.ac.jp, Takashiri, Masayuki1 (AUTHOR) takashiri@tokai.ac.jp
Publikováno v:
Sensors (14248220). Nov2024, Vol. 24 Issue 21, p7060. 13p.
Autor:
Nilsson M; Division of Cell and Neurobiology, Department of Biomedical and Clinical Sciences, Linköping University, SE-581 85 Linköping, Sweden., Wang K; Division of Cell and Neurobiology, Department of Biomedical and Clinical Sciences, Linköping University, SE-581 85 Linköping, Sweden., Mínguez-Viñas T; Division of Cell and Neurobiology, Department of Biomedical and Clinical Sciences, Linköping University, SE-581 85 Linköping, Sweden., Angelini M; Department of Anesthesiology and Perioperative Medicine, David Geffen School of Medicine, University of California, Los Angeles, Los Angeles, CA 90095, USA., Berglund S; Division of Cell and Neurobiology, Department of Biomedical and Clinical Sciences, Linköping University, SE-581 85 Linköping, Sweden., Olcese R; Department of Anesthesiology and Perioperative Medicine, David Geffen School of Medicine, University of California, Los Angeles, Los Angeles, CA 90095, USA.; Department of Physiology, David Geffen School of Medicine, University of California, Los Angeles, Los Angeles, CA 90095, USA., Pantazis A; Division of Cell and Neurobiology, Department of Biomedical and Clinical Sciences, Linköping University, SE-581 85 Linköping, Sweden.; Wallenberg Center for Molecular Medicine, Linköping University, SE-581 85 Linköping, Sweden.
Publikováno v:
Science advances [Sci Adv] 2024 Sep 13; Vol. 10 (37), pp. eadp6665. Date of Electronic Publication: 2024 Sep 11.
Autor:
Prieto-Montañez, Yulieth
Inspired by well-known examples of hyperk\"ahler manifolds, we show that any hyperk\"ahler manifold $X$ of K3$^{[n]}$-type with Picard number $\rho(X) \geq 4$ is always isomorphic to a moduli space of twisted stable sheaves on a K3 surface. Additiona
Externí odkaz:
http://arxiv.org/abs/2408.16610
Autor:
Dobney, C. P., Nasir, A., See, P., Ford, C. J. B., Griffiths, J. P., Chen, C., Ritchie, D. A., Kataoka, M.
Publikováno v:
Semicond. Sci. Technol. 38 065001 (2023)
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed
Externí odkaz:
http://arxiv.org/abs/2408.08423
Autor:
Ranjeesh, Kayaramkodath Chandran1, Rezk, Ayman2, Martinez, Jose Ignacio3, Gaber, Safa1, Merhi, Areej4, Skorjanc, Tina5, Finšgar, Matjaž6, Luckachan, Gisha Elizabeth1, Trabolsi, Ali7,8, Kaafarani, Bilal R.4 bilal.kaafarani@aub.edu.lb, Nayfeh, Ammar2 ammar.nayfeh@ku.ac.ae, Shetty, Dinesh1,9 dinesh.shetty@ku.ac.ae
Publikováno v:
Advanced Science. 10/17/2023, Vol. 10 Issue 29, p1-8. 8p.