Zobrazeno 1 - 10
of 34
pro vyhledávání: '"N V L Narasimha Murty"'
Autor:
Gangireddy Narendra Kumar Reddy, M. Sabarimalai Manikandan, N. V. L. Narasimha Murty, Linga Reddy Cenkeramaddi
Publikováno v:
IEEE Access, Vol 11, Pp 41708-41740 (2023)
Due to the high demands of tiny, compact, lightweight, and low-cost photoplethysmogram (PPG) monitoring devices, these devices are resource-constrained including limited battery power. Consequently, it highly demands frequent charge or battery replac
Externí odkaz:
https://doaj.org/article/d3b9b0bb970b49629dacf180a50da72c
Publikováno v:
IEEE Access, Vol 10, Pp 15707-15745 (2022)
Real-time photoplethysmogram (PPG) denoising and data compression has become most essential requirements for accurately measuring vital parameters and efficient data transmission but that may introduce different kinds of waveform distortions due to t
Externí odkaz:
https://doaj.org/article/763df2bef77b4e9988c0cb5ed069ca34
Autor:
Aniruddh Bahadur Yadav, N. V. L. Narasimha Murty, Bandaru Lasya, Sreenivasulu Mamilla, Basavaraj S. Sannakashappanavar
Publikováno v:
Journal of Electronic Materials. 52:3228-3241
Autor:
Kunal Singh, Aniruddh Bahadur Yadav, Vinod Kumar, Basavaraj S. Sannakashappanavar, N. V. L. Narasimha Murty
Publikováno v:
Silicon. 14:1531-1536
A high performance electronic device can be fabricated by achieving a high quality metal thin film Ohmic contact to intrinsic ZnO. In the present work, the low specific contact resistance Cr/Au metallization scheme deposited on n-type intrinsic 100 n
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 69:6351-6361
In this article, we propose a new on-device photoplethysmography (PPG) signal quality assessment (SQA) system based on the first-order (FO) predictor coefficient (PC) of differenced sensor (DS) signal that is capable of significantly reducing false a
Autor:
C. R. Byrareddy, N. V. L. Narasimha Murty, Aniruddh Bahadur Yadav, Basavaraj S. Sannakashappanavar
Publikováno v:
Journal of Electronic Materials. 49:5272-5280
The present study illustrates the fabrication of ZnO ultra-thin film (25 nm)-based bottom gate phototransistors using RF sputtering and thermal evaporation on SiO2/Si substrate for UV detection. According to the literature, phototransistors have the
Publikováno v:
2021 3rd International Conference on Electrical & Electronic Engineering (ICEEE).
Publikováno v:
2021 4th International Conference on Bio-Engineering for Smart Technologies (BioSMART).
Publikováno v:
2021 IEEE International Conference on Health, Instrumentation & Measurement, and Natural Sciences (InHeNce).
In most wearable devices, pulse rate (PR) is measured from photoplethysmogram (PPG) signal by using fast Fourier transform (FFT), autoregressive (AR), autocorrelation function (ACF) and peak counting methods. In this paper, we study accuracy and reli