Zobrazeno 1 - 10
of 241
pro vyhledávání: '"N V Kryzhanovskaya"'
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-11 (2021)
The use of epitaxial In (Ga)As quantum dots and relatively simple post growth methods make it possible to realize microdisk lasers capable of operating without temperature stabilization at elevated temperatures.
Externí odkaz:
https://doaj.org/article/a12728ade49543ceb5848b7f5eaa3fc9
Autor:
S. A. Mintairov, S. A. Blokhin, N. A. Kalyuzhnyy, M. V. Maximov, N. A. Maleev, A. M. Nadtochiy, R. A. Salii, N. V. Kryzhanovskaya, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:161-164
Autor:
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, A. S. Dragunova, A. M. Nadtochiy, M. V. Maximov, N. Yu. Gordeev
Publikováno v:
Semiconductors. 56:139-144
Autor:
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorobiev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:90-94
Autor:
N. V. Kryzhanovskaya, I. A. Melnichenko, A. S. Bukatin, A. A. Kornev, N. A. Filatov, S. A. Shcherbak, A. A. Lipovskii, A. S. Dragunova, M. M. Kulagina, A. I. Likhachev, M. V. Fetisova, I. V. Reduto, M. V. Maximov, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:74-77
Autor:
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, F. I. Zubov, M. V. Fetisova, M. V. Maximov, N. Yu. Gordeev
Publikováno v:
Semiconductors. 55:S67-S71
Autor:
A. E. Zhukov, E. I. Moiseev, A. M. Nadtochii, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyi, F. I. Zubov, M. V. Maksimov
Publikováno v:
Technical Physics Letters. 47:685-688
Autor:
N. V. Kryzhanovskaya, Alexey E. Zhukov, Mikhail V. Maximov, Alexey M. Nadtochiy, Anna S. Dragunova, Eduard Moiseev
Publikováno v:
Semiconductors. 55:250-255
Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and conf
Autor:
A. V. Babichev, N. V. Kryzhanovskaya, D. V. Denisov, A. G. Gladyshev, E. S. Kolodeznyi, Alexey M. Nadtochiy, A. Yu. Egorov, Innokenty I. Novikov, Anna S. Dragunova, L. Ya. Karachinsky, A. V. Uvarov, S. D. Komarov, V. V. Andryushkin
Publikováno v:
Optics and Spectroscopy. 129:256-260
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spe
Autor:
Anna S. Dragunova, Alexey M. Nadtochiy, Sergey A. Mintairov, N. V. Kryzhanovskaya, F. I. Zubov, Svetlana A. Kadinskaya, Nikolay A. Kalyuzhnyy, M. V. Maximov, Eduard Moiseev, Alexey E. Zhukov, M. M. Kulagina, Yury Berdnikov
Publikováno v:
IEEE Journal of Quantum Electronics. 56:1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical p