Zobrazeno 1 - 10
of 47
pro vyhledávání: '"N Shokhudzhaev"'
Publikováno v:
Quantum Electronics. 23:186-188
Heterostructures based on GalnAsP/lnP with a graded-interface heterojunction have been developed. Examination by metallography, electron microprobe analysis, and electroluminescence shows that the graded-interface layer is at the boundary between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133825fd3723387d09a7bef9621a1d0a
https://doi.org/10.1070/qe1993v023n03abeh002971
https://doi.org/10.1070/qe1993v023n03abeh002971
Publikováno v:
Soviet Journal of Quantum Electronics. 16:1046-1050
A study was made of the relationship between the radiative characteristics of GaInAsP/InP lasers (λ~1.08–1.61μ, 300K) and anisotropic deformation of the active layer that occurs either as a result of external compression or due to mismatch of lat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c59e9bbab5eac977a463e8a28beacc6
https://doi.org/10.1070/qe1986v016n08abeh007236
https://doi.org/10.1070/qe1986v016n08abeh007236
Publikováno v:
Soviet Journal of Quantum Electronics. 5:451-454
The main characteristics of InP and lnPxAs1–x injection laser diodes were determined at 4.2 and 77°K. The spectral, threshold, power, temporal, and spatial properties of the laser radiation were investigated in the wavelength range λ= 900–1100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c66567e96e76e7b0467ccb7b939648cc
https://doi.org/10.1070/qe1975v005n04abeh011112
https://doi.org/10.1070/qe1975v005n04abeh011112
Publikováno v:
Soviet Journal of Quantum Electronics. 16:1051-1055
A study was made of the spectral characteristics of GaInAsP/InP double-heterostructure injection lasers (λ~1.08–1.61μ, 300K) as a function of pressure under uniaxial compression allowing for internal residual stresses in the active layer. The she
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d0db266e227f54bcc527611d3003c8
https://doi.org/10.1070/qe1986v016n08abeh007237
https://doi.org/10.1070/qe1986v016n08abeh007237
Publikováno v:
Soviet Journal of Quantum Electronics. 6:577-579
An investigation was made of the spectral, threshold, power, and time characteristics of laser diodes of planar and stripe geometry with AlxGa1–xAs double heterostructures. The threshold current densities in the Al02Gao8As lasers were 0.9 kA/cm2 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23213e5c156c7e899831d3c132bf2d76
https://doi.org/10.1070/qe1976v006n05abeh011355
https://doi.org/10.1070/qe1976v006n05abeh011355
Publikováno v:
Soviet Journal of Quantum Electronics. 9:1435-1437
The characteristics of heterojunction lasers and light-emitting diodes grown on n- and p-type substrates in a four-component InGaPAs solid solution were compared. Investigations were made of the spectral, temporal, power, and radiative characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee44642b6efc64328df16c040dd705c9
https://doi.org/10.1070/qe1979v009n11abeh009742
https://doi.org/10.1070/qe1979v009n11abeh009742
Publikováno v:
Soviet Journal of Quantum Electronics. 12:1568-1570
Details of the method of fabricating GalnPAs/lnP heterolasers emitting at the ~1550 nm wavelength are given and results of an investigation of the threshold, spectral, and other characteristics of heterolasers in the 1000–1590 nm range are presente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7f2a326b6db09da8ea0a92c3768c1a
https://doi.org/10.1070/qe1982v012n12abeh006284
https://doi.org/10.1070/qe1982v012n12abeh006284
Publikováno v:
Soviet Journal of Quantum Electronics. 14:1120-1121
A study was made of the influence of unidirectional compression along the normal to the active plane of injection lasers emitting in the wavelength range 1.06–1.60μ. In the case of the mode with the TM polarization an increase in the uniaxial pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779ed534b93fa52fa9669e225e0e24a3
https://doi.org/10.1070/qe1984v014n08abeh005386
https://doi.org/10.1070/qe1984v014n08abeh005386
Publikováno v:
Soviet Journal of Quantum Electronics. 16:108-109
Emission of cw coherent radiation at 300 K has been achieved from stripe and mesastripe InGaAsP/InP heterostructure lasers at short wavelengths (1.068-1.085μ). The threshold currents were 140-220 mA. A study was made of the radiative characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d30099b3e47c81fc89ed41f71f20ac6
https://doi.org/10.1070/qe1986v016n01abeh005208
https://doi.org/10.1070/qe1986v016n01abeh005208
Publikováno v:
Soviet Journal of Quantum Electronics. 4:1046-1047
Coherent radiation of λ = 0.97 wavelength was obtained from diffused p-n junctions in InP0.92As0.08 solid solutions. The threshold current density was (5–7)×103 A/cm2 at 77°K. The output power reached 2 W for a quantum efficiency of 4%.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98d825cc264653f819aada8a9315045d
https://doi.org/10.1070/qe1975v004n08abeh011154
https://doi.org/10.1070/qe1975v004n08abeh011154