Zobrazeno 1 - 5
of 5
pro vyhledávání: '"N S Sterin"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:2101-2115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88290c280b2ad10ac81d39ab553d41f9
https://doi.org/10.1007/s10854-021-07415-y
https://doi.org/10.1007/s10854-021-07415-y
Publikováno v:
Synthetic Metals. 250:99-103
Light emitting polymer poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) is blended with a wide bandgap electron transport material benzothiadiazole (BT) and its effect on the electronic properties has been studied by capacitance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72568d22dfb44dc611adbe39ebf6de53
https://doi.org/10.1016/j.synthmet.2019.03.009
https://doi.org/10.1016/j.synthmet.2019.03.009
We have previously used reactively sputtered Platinum oxide thin film as DNA sensing element. In this work, we subject the reactively sputtered Platinum oxide thin films to an additional RIE step for 3, 6 and 9 min and carry out a detailed comparativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d77572215d8a85c2495b63605eade1
https://publica.fraunhofer.de/handle/publica/260311
https://publica.fraunhofer.de/handle/publica/260311
Publikováno v:
physica status solidi (a). 217:2000306
Resistive switching (RS)-based random access memory has been envisaged as a viable alternative to existing memory technology due to its nonvolatility, high switching speed, high endurance/retention, and considerably low operating voltage. Herein, a n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35da826d5b59488e6600b135f5f6c6e0
https://doi.org/10.1002/pssa.202000306
https://doi.org/10.1002/pssa.202000306
Autor:
Sibsankar Mal, Steven Herbert, Marc Cahay, N S Sterin, M Advaitha, Partha Pratim Das, A. Jones, S Kalita, T R Yadunath
The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf94469fa23cf7c0ef48d56c07f2c07e
http://arxiv.org/abs/1702.03398
http://arxiv.org/abs/1702.03398