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pro vyhledávání: '"N S Savkina"'
Autor:
L. M. Sorokin, Jeremy Sloan, John L. Hutchison, N S Savkina, G. N. Mosina, C. J. D. Hetherington, A A Lebedev
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6867a1ca804d8500ae2d0c4ef9a91a
https://doi.org/10.1201/9781351074636-17
https://doi.org/10.1201/9781351074636-17
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 77:34-38
A premature electric breakdown caused by the formation of a strong-field domain under conditions of negative differential conductivity in the 6H-SiC n+-n−-n+ structure optimized for ultrahigh-frequency measurements was observed in the range of elec