Zobrazeno 1 - 4
of 4
pro vyhledávání: '"N S Nechaev"'
Autor:
Irina N. Parkhomenko, N. S. Nechaev, L. A. Vlasukova, A. F. Komarov, G. M. Zayats, Elke Wendler, G. D. Ivlev, S. A. Miskiewicz, F. F. Komarov
Publikováno v:
Acta Physica Polonica A. 136:254-259
Autor:
L. A. Vlasukova, Irina N. Parkhomenko, V. N. Yuvchenko, F. F. Komarov, O. Milchanin, N. S. Nechaev, V.A. Skuratov
Publikováno v:
Journal of Engineering Physics and Thermophysics. 92:508-515
The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The influence of the heat treatment at a temperature of 900°C and
Publikováno v:
Journal of Physics: Conference Series. 2094:032047
An integral part of maintaining a favorable environmental situation on our planet is the observation of its individual objects, including special attention is paid to water bodies. This is due not only to the natural human need for its consumption, b
Autor:
G. D. Ivlev, Irina N. Parkhomenko, I. A. Romanov, N. S. Nechaev, F. F. Komarov, L. A. Vlasukova, Elke Wendler
Publikováno v:
2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP).
Selenium hyperdoped silicon is a promising material for intermediate-band solar cells and extended infrared photodiodes. Selenium-rich layers were fabricated by Se ion implantation followed by pulsed laser annealing (690 nm, 70 ns). Laser energy dens