Zobrazeno 1 - 10
of 70
pro vyhledávání: '"N R, Payne"'
Autor:
Stefan W. Tabernig, Anastasia H. Soeriyadi, Udo Romer, Andreas Pusch, Dimitry Lamers, Matthias Klaus Juhl, David N. R. Payne, Michael P. Nielsen, Albert Polman, Nicholas J. Ekins-Daukes
Publikováno v:
IEEE Journal of Photovoltaics. 12:1116-1127
Autor:
Ole Hansen, Zou Shuai, Malcolm Abbott, Muhammad Umair Khan, Yu Zhang, David N. R. Payne, Giuseppe Scardera, Rasmus Schmidt Davidsen, Bram Hoex, Anastasia Soeriyadi, Zhang Daqi
Publikováno v:
Scardera, G, Payne, D, Khan, M, Zhang, Y, Soeriyadi, A, Zou, S, Zhang, D, Davidsen, R, Hansen, O, Hoex, B & Abbott, M 2021, ' Silicon Nanotexture Surface Area Mapping Using Ultraviolet Reflectance ', IEEE Journal of Photovoltaics, vol. 11, no. 5, 9462317, pp. 1291-1298 . https://doi.org/10.1109/JPHOTOV.2021.3086439
Scardera, G, Payne, D N R, Umair Khan, M, Zhang, Y, Soeriyadi, A, Zou, S, Zhang, D, Davidsen, R S, Hansen, O, Hoex, B & Abbott, M D 2021, ' Silicon Nanotexture Surface Area Mapping Using Ultraviolet Reflectance ', IEEE Journal of Photovoltaics, vol. 11, no. 5, pp. 1291-1298 . https://doi.org/10.1109/JPHOTOV.2021.3086439
Scardera, G, Payne, D N R, Umair Khan, M, Zhang, Y, Soeriyadi, A, Zou, S, Zhang, D, Davidsen, R S, Hansen, O, Hoex, B & Abbott, M D 2021, ' Silicon Nanotexture Surface Area Mapping Using Ultraviolet Reflectance ', IEEE Journal of Photovoltaics, vol. 11, no. 5, pp. 1291-1298 . https://doi.org/10.1109/JPHOTOV.2021.3086439
The enhanced surface area of silicon nanotexture is an important metric for solar cell integration as it affects multiple properties including optical reflectance, dopant diffusion, and surface recombination. Silicon nanotexture is typically characte
Publikováno v:
IEEE Journal of Photovoltaics. 11:897-907
Black silicon (b-Si) surfaces typically have a high density of extreme nanofeatures and a significantly large surface area. This makes high-quality surface passivation even more critical for devices such as solar cells with b-Si surfaces. It has been
Autor:
Stuart Wenham, Jose I. Bilbao, David N. R. Payne, Moonyong Kim, Daniel Chen, Alison Ciesla, Catherine Chan, Brett Hallam
Publikováno v:
IEEE Journal of Photovoltaics. 10:28-40
Photovoltaic (PV) cells manufactured using p-type Czochralski wafers can degrade significantly in the field due to boron–oxygen (BO) defects. Commercial hydrogenation processes can now passivate such defects; however, this passivation can be destab
Autor:
Supriya Pillai, Alexander Sprafke, David N. R. Payne, Darren M. Bagnall, Yuanchih Chang, Michael E. Pollard
Publikováno v:
IEEE Journal of Photovoltaics. 9:1012-1019
Light trapping in thin silicon solar cells demands radically different fabrication approaches to standard commercial cells. Weaker optical absorption and increased sensitivity to surface recombination requires light trapping to be achieved over a bro
Autor:
David N. R. Payne, Chee Mun Chong, Ly Mai, Alison Ciesla, Brett Hallam, Zhengrong Shi, Ziv Hameiri, Stuart Wenham, Jingjia Ji, Sisi Wang, Catherine Chan
Publikováno v:
Solar Energy Materials and Solar Cells. 193:403-410
In this work, we investigate the use of advanced hydrogenation and low-temperature diffusion processes (a 3 h 700 °C process after emitter diffusion) for the electrical neutralization of laser-induced defects for laser doped and grooved solar cells.
Autor:
Ned J. Western, Keith R. Mclntosh, Malcolm Abbott, Muhammad Umair Khan, David N. R. Payne, Tsun Hang Fung, Yu Zhang
Publikováno v:
IEEE Journal of Photovoltaics. 9:591-600
This paper presents an experimental investigation into the light trapping within silicon wafers textured by upright random pyramids. In prior studies, the conventional approach to simulating random pyramids agrees poorly with experimental data at wav
Publikováno v:
Solar Energy Materials and Solar Cells, 189, 166-174
In the past few years, carrier-induced degradation (CID) in p-type multicrystalline silicon (mc-Si) has been receiving significant attention. Recently, it has been reported that this material is also susceptible to degradation under dark anneal at mo
Autor:
Ruy S. Bonilla, Stuart Wenham, David N. R. Payne, Phillip Hamer, Catherine Chan, Ran Chen, Brett Hallam, Gabrielle Bourret-Sicotte, Alison Ciesla
Recently, there have been reports of increased series resistance as a consequence of thermal processes applied after the co-firing of screen-printed silicon solar cells. A previous observation of this effect on very heavily diffused emitters conclude
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc3f64e9bf72214e7824ef4873117c16
https://ora.ox.ac.uk/objects/uuid:ae4822a5-b0dd-437d-9386-3d3463103107
https://ora.ox.ac.uk/objects/uuid:ae4822a5-b0dd-437d-9386-3d3463103107
Autor:
Malcolm Abbott, Muhammad Umair Khan, David N. R. Payne, Ole Hansen, Bram Hoex, Rasmus Schmidt Davidsen, Zhang Daqi, Zou Shuai, Ly Mai, Shaozhou Wang, Yu Zhang, Giuseppe Scardera
Publikováno v:
Scardera, G, Wang, S, Zhang, Y, Umair Khan, M, Zou, S, Zhang, D, Davidsen, R S, Hansen, O, Mai, L, Payne, D N R, Hoex, B & Abbott, M D 2021, ' On the enhanced phosphorus doping of nanotextured black silicon ', IEEE Journal of Photovoltaics, vol. 11, no. 2 . https://doi.org/10.1109/JPHOTOV.2020.3047420
Scardera, G, Wang, S, Zhang, Y, Khan, M U, Zou, S, Zhang, D, Davidsen, R S, Hansen, O, Mai, L, Payne, D N R, Hoex, B & Abbott, M D 2021, ' On the Enhanced Phosphorus Doping of Nanotextured Black Silicon ', IEEE Journal of Photovoltaics, vol. 11, no. 2, pp. 298-305 . https://doi.org/10.1109/JPHOTOV.2020.3047420
Scardera, G, Wang, S, Zhang, Y, Khan, M U, Zou, S, Zhang, D, Davidsen, R S, Hansen, O, Mai, L, Payne, D N R, Hoex, B & Abbott, M D 2021, ' On the Enhanced Phosphorus Doping of Nanotextured Black Silicon ', IEEE Journal of Photovoltaics, vol. 11, no. 2, pp. 298-305 . https://doi.org/10.1109/JPHOTOV.2020.3047420
The integration of nanotextured black silicon (B-Si) into solar cells is often complicated by its enhanced phosphorus doping effect, which is typically attributed to increased surface area. In this article, we show that B-Si's surface-to-volume ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d23e503fc0c764c48dd6273fa9849fe
https://pure.au.dk/portal/da/publications/on-the-enhanced-phosphorus-doping-of-nanotextured-black-silicon(2a96891c-b158-4429-9fb8-dc7d58c0a4db).html
https://pure.au.dk/portal/da/publications/on-the-enhanced-phosphorus-doping-of-nanotextured-black-silicon(2a96891c-b158-4429-9fb8-dc7d58c0a4db).html