Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N R, Parikh"'
Autor:
Nasr M. Ghoniem, A. Bozek, S. Zenobia, Jaafar A. El-Awady, J.L. Weaver, Matthew F. Wolford, S.M. Gidcumb, Nicole Petta, Craig L. Olson, Dennis L. Sadowski, Timothy J. Renk, John J. Karnes, Kathleen I. Schaffers, J. Caird, D. Weidenheimer, James K. Hoffer, T. Bernat, J. Hund, Lane Carlson, H. Sanders, K. Schoonover, G. Sviatoslavsky, J.E. Streit, A.R. Raffray, A.E. Robson, D Harding, Maximilian B. Gorensek, Farrokh Najmabadi, Diana Grace Schroen, D. V. Rose, James Blanchard, Robert Lehmberg, Gerald L. Kulcinski, L.J. Perkins, C. Ebbers, Drew Geller, K.-J. Boehm, G. Romanoski, J F Latkowski, T Lehecka, D Forsythe, S C. Glidden, John Giuliani, D.T. Goodin, D. Morton, Frank Hegeler, Keith J. Leonard, Shahram Sharafat, W. Parsells, M. W. McGeoch, Q. Hu, Wayne R. Meier, S B Gilliam, Neil Alexander, Mark S. Tillack, G.W. Flint, I. D. Smith, Gregory A. Moses, John D. Sheliak, Andrew J. Schmitt, C Prinksi, S O'Dell, S. P. Obenschain, E. Marriott, M Bobecia, C. Gentile, John D. Sethian, Chad E. Duty, T. Kozub, Lance Lewis Snead, R.W. Petzoldt, Ahmad M. Ibrahim, M.C. Myers, John F. Santarius, Steven J. Zinkle, Moshe Friedman, D. Bittner, Denis Colombant, R. Radell, R. Paguio, Thad Heltemes, Andy J. Bayramian, T. Dodson, W.J. Hogan, J. Pulsifer, N R Parikh, S. Abdel Kahlik, Mohamed E. Sawan
Publikováno v:
IEEE Transactions on Plasma Science. 38:690-703
We are carrying out a multidisciplinary multi-institutional program to develop the scientific and technical basis for inertial fusion energy (IFE) based on laser drivers and direct-drive targets. The key components are developed as an integrated syst
Autor:
A. F. Chow, N. R. Parikh, R. R. Woolcott, T. M. Graettinger, Angus I. Kingon, Daniel J. Lichtenwalner, Lynn A. Boatner, Orlando Auciello
Publikováno v:
Applied Physics Letters. 65:1073-1075
Epitaxial potassium niobate (KNbO3) thin films have been deposited on KTaO3 (100), MgAl2O4 (100), and MgO (100) substrates using ion‐beam sputter deposition. X‐ray‐diffraction results show that KNbO3 films have orthorhombic (110) orientation on
Publikováno v:
Indian journal of pathologymicrobiology. 44(2)
Microscopic infiltration of the thyroid gland by amyloid is an uncommon but well recognized phenomenon and significant enlargement of the thyroid due to deposition of amyloid is rarely seen. This condition has to be distinguished from other types of
Publikováno v:
The Journal of the Louisiana State Medical Society : official organ of the Louisiana State Medical Society. 149(4)
A survey was undertaken to learn about cancer screening practices of adult women residing in Houma, Louisiana, many of whom are of Cajun descent. The women were identified using a telephone sampling procedure and interviewed about their use of screen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:304
The evolution of strain in the Pd–Si system during the growth of Pd2Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt–Si system, the reaction to form Pd2Si yields a com
Publikováno v:
Radiation Effects. 98:289-300
Lattice disorder produced by ion implantation of CdS crystals with Bi+, Kr+, Ar+ and Ne+ has been studied using RBS/Channeling and Transmission Electron Microscopy (TEM). Channeling measurements of...
Publikováno v:
Journal of Vacuum Science and Technology. 7:588-592
Investigations were carried out regarding the feasibility of Kanthal resistive films in hybrid integrated circuits. The technique for deposition was conventional evaporation from a multistrand tungsten filament onto substrates at 325 °C, in vacua be
Publikováno v:
Anaesthesia. 38(10)
Summary A case is reported in which death occurred after a patient's adamant refusal to accept blood transfusion, despite prompt control of blood loss. The management of this situation is discussed. Reconstitution of the circulating volume was follow
Autor:
A. K. Mattoo, N. R. Parikh
Publikováno v:
Fungal Genetics Reports. 22
Publikováno v:
MRS Proceedings. 27
Implantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident