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Akademický článek

MeV Energy $\hbox{N}^{+}$-Implanted Planar Optical Waveguides in Er-Doped Tungsten-Tellurite Glass Operating at 1.55 $\mu\hbox{m}$

Autor: I. Banyasz, S. Berneschi, M. Bettinelli, M. Brenci, M. Fried, N. Q. Khanh, T. Lohner, G. Nunzi Conti, S. Pelli, P. Petrik, G. C. Righini, A. Speghini, A. Watterich, Z. Zolnai

Publikováno v: IEEE Photonics Journal, Vol 4, Iss 3, Pp 721-727 (2012)

We report on the fabrication and characterization of planar waveguides in an Er-doped tungsten-tellurite glass by implantation of 3.5 MeV N+ ions. Implantations were carried out in a wide fluence range of 1·1016 ÷8 ·1016 ions/cm2. Waveguides were

Externí odkaz: https://doaj.org/article/ebd739019212413c8c7a2680ecb3aa5e

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In situ study of electric field controlled ion transport in the Fe/BaTiO3 interface

Autor: Atefeh Jafari, J-P Celse, A. I. Chumakov, Rudolf Rüffer, D. Bessas, Sz. Sajti, N. Q. Khanh, G. Bazso, Dániel G. Merkel, D. L. Nagy

Publikováno v: Materials Research Express. 5:016405

Electric field controlled ion transport and interface formation of iron thin films on a BaTiO3 substrate have been investigated by in situ nuclear resonance scattering and x-ray reflectometry techniques. At early stage of deposition, an iron-II oxide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7fbccd02e3bd48d455ae5ee23901cb5e
https://doi.org/10.1088/2053-1591/aaa16c

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Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films

Autor: M. Morvic, D. K. Basa, Á. Nemcsics, Miklós Serényi, J. Betko, N. Q. Khanh

Publikováno v: Microelectronics Reliability. 45:1252-1256

In this study mechanical and electrical properties of the RF sputtered hydrogenated amorphous silicon germanium thin films deposited at room temperature have been discussed. Interesting correlation between the resistance and the flow of hydrogen is o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f200dd280892c11df2d53b9d2237486
https://doi.org/10.1016/j.microrel.2005.02.008

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Fabrication of a‐SiGe structure by rf sputtering for solar cell purposes

Autor: M. Morvic, Á. Nemcsics, J. Betko, N. Q. Khanh, Miklós Serényi

Publikováno v: physica status solidi (c). :857-861

The deposition and electronic properties of a-SiGe and a-Si layers for thin-film solar cell applications are discussed. Technological parameters were developed for good layer quality of amorphous material. An inverse relation was discovered between t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1393fba2180c9d62e5f9e106ac9e004b
https://doi.org/10.1002/pssc.200306325

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Effect of nanosphere monolayer on the morphology of ZnO nanowires grown by hydrothermal method

Autor: András Deák, E. Fülöp, Gy. Safran, István Endre Lukács, Robert Erdélyi, J. Volk, N. Q. Khanh

Publikováno v: Materials Letters. 79:242-244

Very high aspect ratio ZnO nanowires have been prepared by a novel nanosphere assisted hydrothermal method. The wires were synthesized on a ZnO seed layer, which was covered by a monolayer of Stober silica nanoparticles. The so formed nanowires were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac466157f92110f7e65087ec21d1f889
https://doi.org/10.1016/j.matlet.2012.04.038

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Integrated horizontal ZnO nanowires for sensor applications

Autor: Zoltán Szabó, N. Q. Khanh, Robert Erdélyi, J. Volk, István Endre Lukács, K. Kubina, Sándor Kurunczi, Gy. Safran

Publikováno v: 2012 IEEE Sensors.

We describe the route to grow an array of horizontal ZnO nanowires between two predefined electrodes on silicon oxide surface at low temperature (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47f19d89302253acc713d63a2ea722d4
https://doi.org/10.1109/icsens.2012.6411461

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Athermal effects in ion implanted layers

Autor: H. Ryssel, László P. Biró, G. Serfözö, A. Kuki, N. Q. Khanh, L. Frey, József Gyulai, T. Kormany

Publikováno v: Scopus-Elsevier

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::540255e773c66a3360047628484f852d
https://doi.org/10.1080/10420159408221047

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Channel waveguide fabrication in Er3+-doped tellurite glass by ion beam irradiation

Autor: Berneschi, M. Brenci, G. Nunzi Conti, S. Pelli, G. C. Righini, I. Banyasz, A. Watterich, N. Q. Khanh, M. Fried, F. Pszti

Publikováno v: Photonics West, San Josè (USA), 2007
info:cnr-pdr/source/autori:Berneschi, M. Brenci, G. Nunzi Conti, S. Pelli, G. C. Righini, I. Banyasz, A. Watterich, N. Q. Khanh, M. Fried, F. Pszti/congresso_nome:Photonics West/congresso_luogo:San Josè (USA)/congresso_data:2007/anno:2007/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::dbbe2e51acc6d961aea4e52bdc6b7bf5
https://publications.cnr.it/doc/80633

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Pairing of noble metals with phosphorus

Autor: Gábor Battistig, Horst Zimmermann, Heiner Ryssel, N. Q. Khanh, József Gyulai

Publikováno v: Applied Physics Letters. 60:748-750

Pairing of gold and platinum with phosphorus is examined. For this purpose, gold, respectively platinum, is diffused into silicon wafers, which contained phosphorus doped regions. A value of 1.0×1019 cm−3 at 900 °C is suggested for the equilibriu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58f0eca8dbc5d54614076a0531ea9e16
https://doi.org/10.1063/1.106557

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