Zobrazeno 1 - 10
of 46
pro vyhledávání: '"N N, Vasil'ev"'
Publikováno v:
JETP Letters. 113:466-470
A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d
Autor:
Z. D. Kvon, Nikolay N. Mikhailov, D. A. Kozlov, S. A. Dvoretskii, A. S. Yaroshevich, M. L. Savchenko, N. N. Vasil’ev
Publikováno v:
Physics of the Solid State. 60:778-782
Strained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there are a number of studies devoted to analys
Autor:
N. N. Vasil’ev
Publikováno v:
Optics and Spectroscopy. 108:45-50
The experimentally obtained intensity decay curves for the 2-eV intracenter luminescence band of Mn2+ ions in Cd0.5Mn0.5Te semiconductor solid solution at a temperature of 77 K have been simulated by the Monte Carlo method. The calculations show that
Autor:
N. N. Vasil’ev
Publikováno v:
Optics and Spectroscopy. 105:251-256
The curves of intracenter luminescence decay for Mn2+ ions in the Cd0.5Mn0.5Te semiconductor solid solution, obtained in a low-temperature experiment, have been simulated by the Monte Carlo method. The features of the kinetics of the 2-eV band in the
Autor:
N. G. Filosofov, A. Yu. Serov, Ichiro Akai, Grzegorz Karczewski, Tsutomu Karasawa, N. N. Vasil’ev, V. F. Agekyan
Publikováno v:
Physics of the Solid State. 49:1175-1183
The emission spectra of Zn1−x Mn x Te/Zn0.6Mg0.4Te and Cd1−x Mn x Te/Cd0.5Mg0.5Te quantum-well structures with different manganese concentrations and quantum-well widths are studied at excitation power densities ranging from 105 to 107 W cm−2.
Autor:
N. N. Vasil’ev
Publikováno v:
Optics and Spectroscopy. 102:426-431
It is experimentally shown that the Mn2+ ionic subsystem in the three-and two-dimensional structures of diluted magnetic semiconductors of the II–VI groups is saturated upon pulsed excitation by high-power laser radiation with a wavelength of 532.1
Autor:
V. F. Agekyan, N. N. Vasil’ev, U. V. Tazaev, Yu. A. Stepanov, G. Karczewski, A. Yu. Serov, N. G. Filosofov
Publikováno v:
Semiconductors. 40:67-71
The luminescence spectra controlled by excitons and intracenter 3d emission of Mn2+ ions are studied for a series of Zn1-xMnxTe/Zn0.59Mg0.41 Te quantum well (QW) structures that differ in manganese content and QW width. It is shown that the relative
Publikováno v:
Physics of the Solid State. 46:1776-1780
Emission spectra of three Cd0.6Mn0.4Te/Cd0.5Mg0.5Te superlattices with Cd0.6Mn0.4Te quantum-well (QW) widths of 7, 13, and 26 monolayers, respectively, and the same thickness (46 monolayers) of the Cd0.5Mg0.5Te barriers have been studied. The QW widt
Autor:
V. N. Yakimovich, N. G. Filosofov, N. N. Vasil’ev, A. Yu. Serov, V. I. Konstantinov, V. F. Agekyan
Publikováno v:
Physics of the Solid State. 45:1435-1439
Intracenter luminescence (IL) of Mn2+ in Zn1−xMnxSe (x=0.07, 0.02) was studied under pulsed excitation by the neodymium laser second harmonic. At 4 K, the IL saturation originates from the nonlinearity of the system only at the instant of excitatio
Publikováno v:
Journal of Crystal Growth. :391-394
A peculiar mechanism of light absorption and emission related to the 3d-electron states in iron group atoms occurs in the dilute magnetic semiconductors (DMSs) along with the conventional band-to-band mechanism. The light emission from 3d-levels is i