Zobrazeno 1 - 10
of 76
pro vyhledávání: '"N N, Tkachenko"'
Autor:
I. A. Stoller, M. V. Sukholentseva, N. N. Tkachenko, Ye. G. Veryovkin, M. B. Shtark, S. V. Yarosh
Publikováno v:
Бюллетень сибирской медицины, Vol 9, Iss 2, Pp 24-33 (2010)
The dynamics of the segment characteristics of alpha-rhythm and their correlation with the «behaviour» of dipole sources of alpha-band in relation to beta-stimulating neurofeedback in schoolchildren with ADHD syndrome were analyzed. Effective train
Externí odkaz:
https://doaj.org/article/2ac9940b454f4191888b7262bf6d0fe9
Publikováno v:
Problemy reproduktsii. 25:86
Autor:
M. V. Sukholentseva, Ye. G. Veryovkin, N. N. Tkachenko, I. A. Stoller, S. V. Yarosh, M. B. Shtark
Publikováno v:
Bûlleten' Sibirskoj Mediciny, Vol 9, Iss 2, Pp 24-33 (2010)
The dynamics of the segment characteristics of alpha-rhythm and their correlation with the «behaviour» of dipole sources of alpha-band in relation to beta-stimulating neurofeedback in schoolchildren with ADHD syndrome were analyzed. Effective train
Publikováno v:
Problems of Endocrinology. 48:21-26
The article is devoted to the pathogenesis, diagnosis, and prediction of postpartum thyroiditis
Autor:
V. V. Potin, Maria I. Yarmolinskaya, M. A. Tarasova, N. N. Tkachenko, N. Yu. Shved, I. P. Nikolaenkov, Ya. A. Samoilovich, E. M. Timofeeva
Publikováno v:
Rossiiskii vestnik akushera-ginekologa. 15:25
Autor:
N P, Alekseev, V I, Il'in, V K, Iaroslavskiĭ, S N, Gaĭdukov, T K, Tikhonova, E V, Omel'ianiuk, N N, Tkachenko, M A, Kucherenko
Publikováno v:
Fiziologiia cheloveka. 22(4)
Publikováno v:
Klinicheskaia khirurgiia. (4)
With the use of thermovision set TVT-01 "Raduga" 17 healthy persons (control group) and 40 injured persons with the burn of various degree of severity were examined. In superficial I-II degree burn on the hand the temperature within the centre of inj
Autor:
E L, Shul'ga, N N, Tkachenko
Publikováno v:
Fiziologicheskii zhurnal imeni I.M. Sechenova. 80(1)
Publikováno v:
Physica Status Solidi (a). 64:697-706
The model of electroluminescence in forward-biased MS and MIS light-emitting diodes based on the Auger recombination on the contact surface of the semiconductor is developed. Such a model may provide a light emission with the threshold voltage Uth =
Autor:
A. N. Pilyankevich, A. V. Kurdyumov, L. I. Fel'dgun, N. N. Tkachenko, G. S. Oleinik, N. F. Ostrovskaya
Publikováno v:
Soviet Powder Metallurgy and Metal Ceramics. 18:664-668