Zobrazeno 1 - 10
of 71
pro vyhledávání: '"N L Bazhenov"'
Autor:
N. K. Zhumashev, K. D. Munbaev, N. L. Bazhenov, N. D. Stoyanov, S. S. Kizhaev, T. I. Gurina, A. P. Astakhova, A. V. Tchernyaev, S. S. Molchanov, K. M. Salikhov, V. E. Bougrov, H. Lipsanen
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 16, Iss 1, Pp 76-84 (2016)
Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P) emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the way
Externí odkaz:
https://doaj.org/article/56241829b2234982b4df8e70ea3d0f4c
Autor:
A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov
Publikováno v:
Semiconductors. 55:989-994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4283aa4316982d09d10bc13fb495de
https://doi.org/10.1134/s1063782621080169
https://doi.org/10.1134/s1063782621080169
Autor:
A. A. Semakova, N. L. Bazhenov, K. D. Mynbaev, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov
Publikováno v:
Semiconductors. 55:557-561
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee6f1936671f2c64538299fbe2bb51f
https://doi.org/10.1134/s1063782621060130
https://doi.org/10.1134/s1063782621060130
Publikováno v:
Semiconductors. 55:354-358
A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a749a1711f46d4c5c86d00eefb1fd0c6
https://doi.org/10.1134/s1063782621030155
https://doi.org/10.1134/s1063782621030155
Autor:
A. M. Smirnov, V. G. Remesnik, N. L. Bazhenov, K. D. Mynbaev, Nikolay N. Mikhailov, M. V. Yakushev
Publikováno v:
Semiconductors. 54:1561-1566
The results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid-solution samples with a high content of CdTe (molar fraction 0.7–0.8), grown by molecular-beam epitaxy (MBE) and liquid-ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c16efb579f9acbfc2775db48d26fd2b
https://doi.org/10.1134/s1063782620120258
https://doi.org/10.1134/s1063782620120258
Autor:
S. N. Lipnitskaya, Harri Lipsanen, A. A. Semakova, S. S. Kizhaev, K. D. Mynbaev, A. V. Chernyaev, N. L. Bazhenov, N. D. Stoyanov
Publikováno v:
Technical Physics Letters. 46:150-153
The spectral parameters of midinfrared LED heterostructures with an InAs active region were studied experimentally, calculated using MATLAB, and simulated in COMSOL Multiphysics. The obtained data were compared to reveal the mechanism of formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971a8888a65773482707ef4ec5d72bfd
https://doi.org/10.1134/s1063785020020121
https://doi.org/10.1134/s1063785020020121
Autor:
V. N. Nevedomskii, R. V. Levin, G. G. Zegrya, B. V. Pushnyi, A. A. Usikova, N. L. Bazhenov, N. V. Pavlov, K. D. Mynbaev, I. V. Fedorov
Publikováno v:
Technical Physics. 64:1509-1514
The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c909fcff428ffe2cbe58b523f6bfc28c
https://doi.org/10.1134/s106378421910013x
https://doi.org/10.1134/s106378421910013x
Autor:
V. I. Ivanov-Omskii, D. A. Andryushchenko, V. S. Varavin, K. D. Mynbaev, V. G. Remesnik, S. A. Dvoretskii, I. N. Trapeznikova, N. L. Bazhenov, M. V. Yakushev, Nikolay N. Mikhailov
Publikováno v:
Technical Physics Letters. 45:553-556
The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe77369b02c6023e1b8020595468085
https://doi.org/10.1134/s1063785019060099
https://doi.org/10.1134/s1063785019060099
Publikováno v:
Semiconductors. 53:428-433
Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5801320a2d7fa93da50353913aa412e
https://doi.org/10.1134/s1063782619040043
https://doi.org/10.1134/s1063782619040043
Publikováno v:
Semiconductors. 53:260-263
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c7f95cc4b35859eaa381b3d29400aec
https://doi.org/10.1134/s1063782619020155
https://doi.org/10.1134/s1063782619020155