Výsledky vyhledávání

Crystallized amorphous deposits for relaxed epitaxy: CdTe(001) on GaAs(001)

Autor: N. K. Dhar, C. E. C. Wood

Publikováno v: Journal of Applied Physics. 78:4463-4466

When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e185d7675684defefabe1c7d7803c4bc
https://doi.org/10.1063/1.359855

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Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs

Autor: J. D. Benson, N. K. Dhar, H. K. Pollehn, John H. Dinan, C.E.C. Wood, M. Martinka, P. R. Boyd

Publikováno v: Journal of Electronic Materials. 24:1041-1046

Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f18cae705268df65d49ebea91ecec216
https://doi.org/10.1007/bf02653050

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Near‐band‐edge photoluminescence from chemically treated CdTe surfaces

Autor: P. M. Amirtharaj, N. K. Dhar

Publikováno v: Journal of Applied Physics. 67:3107-3110

The effects of chemical etching and aging under atmospheric conditions have been investigated in In doped, bulk CdTe using photoluminescence (PL) spectroscopy. The etchants studied included Br2/CH3OH, KOH/CH3OH, Na2S2O4 /NaOH, and K2Cr2O7 /HNO3. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::010b635a808f94f577ea40287acaab28
https://doi.org/10.1063/1.346091

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Investigation of photons in HgCdTe using Raman scattering and far-infrared reflectivity

Autor: H Seelewind, N K Dhar, J Baars, P M Amirtharaj

Publikováno v: Semiconductor Science and Technology. 5:S68-S72

The authors have measured and analyzed the Raman-scattering and far-infrared spectra from unoriented n- and p-type Hg1-xCdxTe with x approximately=0.21. Measurements were made in the 80-180 cm-1 frequency region at temperatures of 10 and 80 K. Compar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c4571f8aa55c63774a33e081ec34511
https://doi.org/10.1088/0268-1242/5/3s/015

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