Zobrazeno 1 - 10
of 242
pro vyhledávání: '"N I Kargin"'
Autor:
A. P. Nizovtsev, N. S. Kukin, A. R. Muradova, P. A. Semenov, A. T. Salkazanov, M. O. Smirnova, A. L. Pushkarchuk, A. N. Vasilev, N. I. Kargin, S. Ya. Kilin
Publikováno v:
Journal of Applied Spectroscopy. 89:1064-1071
A method of vector magnetometry, implemented using a single NV–13C spin system in a diamond, is proposed. The method is based on a priori knowledge of the hyperfine interaction characteristics and on the presence of experimentally measured line pos
Publikováno v:
Materials Today: Proceedings. 80:2620-2624
An algorithm for solving exciton Schrodinger equation in an arbitrary 2D multiple quantum well structure under applied electric field is proposed, allowing one to model both the absorption and refraction spectra consistently and efficiently. It gives
Autor:
A. T. Salkazanov, M. O. Smirnova, S. A. Tarelkin, A. S. Gusev, T. E. Drozdova, M. M. Kaloshin, N. I. Kargin, N. V. Kornilov, A. P. Nizovtsev
Publikováno v:
Journal of Applied Spectroscopy. 89:1059-1063
A method for estimating the isotopic composition and concentration of NV-centers in diamond using Raman scattering and photoluminescence spectra is presented. The proposed laboratory technique was used to study the spatial distribution of the 13C iso
Publikováno v:
Russian Microelectronics. 51:404-412
Autor:
N. V. Gaponenko, P. A. Kholov, Yu. D. Karnilava, E. I. Lashkovskaya, V. A. Labunov, I. L. Martynov, E. V. Osipov, A. A. Chistyakov, N. I. Kargin, T. F. Raichenok, S. A. Tikhomirov
Publikováno v:
Semiconductors. 55:831-834
Autor:
A Yu Kharin, Andrei V. Kabashin, S V Antonenko, S. I. Derzhavin, N. I. Kargin, N. V. Karpov, A. A. Garmash, S. M. Klimentov, V. Yu. Timoshenko, A A Fronya
Publikováno v:
PhysBio Conference
PhysBio Conference, Oct 2022, Moscow, Russia. pp.012011, ⟨10.1088/1742-6596/2058/1/012011⟩
PhysBio Conference, Oct 2022, Moscow, Russia. pp.012011, ⟨10.1088/1742-6596/2058/1/012011⟩
We elaborated a technique of pulsed laser ablation in gas mixtures (He-N2), maintained under residual pressures of 0.5–5 Torr to deposit silicon (Si)-based nanostructured films on a substrate. We show that the deposited films can exhibit strong pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7b2f2de569b8d4101bc30155c5e7d9c
https://hal.science/hal-03873463/document
https://hal.science/hal-03873463/document
Autor:
A. S. Gusev, N. I. Kargin, S. M. Ryndya, G. K. Safaraliev, N. V. Siglovaya, M. O. Smirnova, I. O. Solomatin, A. O. Sultanov, A. A. Timofeev
Publikováno v:
Technical Physics. 66:869-877
Autor:
N. I. Kargin, I. S. Vasilievsky, Konstantin S. Grishakov, A. A. Gorelov, R. V. Ryzhuk, V. V. Lokotko
Publikováno v:
Russian Microelectronics. 50:170-177
AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the f
Autor:
Olga Krymskaya, Margarita Isaenkova, Ya. A. Babich, N. I. Kargin, A. A. Timofeev, V. Y. Tugaenko, D. S. Ovchinnikov
Publikováno v:
Geochemistry International. 59:107-112
Electron microscopic studies of the surface of the spacecraft descent vehicle (DV) have revealed faceted particles of various shape and size, which are formed when the DV travels through the Earth’s atmosphere at an ultrasonic velocity. The particl
Autor:
A. S. Salnikov, I. S. Vasil’evskii, Dmitry D. Zykov, N. I. Kargin, Igor M. Dobush, Dmitry S. Bragin, Artem A. Popov, Andrey A. Gorelov
Publikováno v:
Electronics, Vol 10, Iss 2775, p 2775 (2021)
Electronics
Volume 10
Issue 22
Electronics
Volume 10
Issue 22
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors