Výsledky vyhledávání - "N I, Iakovleva"

Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

Publikováno v: Journal of Communications Technology and Electronics. 66:1096-1102

In the study, a new рBn-architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of III‒V group materials with an n-type AlAsSb barrier layer, an n-type InAsSb absorption layer, and a р-type GaAsSb collector layer, designed for detection of r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::06e0b128b61ab598cbe15063c2c0533d
https://doi.org/10.1134/s1064226921090175

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The Study of Dark Currents in HgCdTe Heterostructure Photodiodes

Autor: N. I. Iakovleva

Publikováno v: Journal of Communications Technology and Electronics. 66:368-374

Dark current is the main factor that influences photodiode performance. It should be minimal to reduce noise and ensure a high level of photoelectric parameters. In order to identify the predominant causes of generation–recombination in photodiodes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94ab03623db73eb5d7984c73b26ec4e7
https://doi.org/10.1134/s1064226921030220

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Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Autor: K. O. Boltar, N. I. Iakovleva, A. V. Nikonov, M. V. Sednev

Publikováno v: Journal of Communications Technology and Electronics. 64:1046-1054

UV visible-blind and solar-blind 320 × 256 photodiode arrays based on AlxGa1 – xN heteroepitaxial structures (AlGaN HES) and sensitive in the near-ultraviolet range of 0.2–0.4 μm have been created and studied. The AlGaN HES were grown by organo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5513be637445bbfc277dcb88f6728b8e
https://doi.org/10.1134/s106422691909016x

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Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures

Autor: N. I. Iakovleva

Publikováno v: Journal of Communications Technology and Electronics. 64:330-333

The surface recombination rates for p-type HgCdTe layers with different dopant concentrations and trap densities Nt are calculated. It is shown that, at the given initial parameters, the surface recombination rate Smax lies in the range of 10–104 c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32ca2e65706200ff4773c7f468006767
https://doi.org/10.1134/s1064226919030215

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Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Autor: A. V. Egorov, K. O. Boltar, A. V. Nikonov, N. I. Iakovleva

Publikováno v: Journal of Communications Technology and Electronics. 63:1132-1136

Parameters of multi-row photodetectors (PDs) based on HgCdTe heteroepitaxial structures of different formats, including 288 × 4, 480 × 6, 576 × 4, and 576 × 6, with a step of 28 to 14 microns are studied. Owing to the choice of a N+/P-/р-archite

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2418815a4160a110c5358a535b593a60
https://doi.org/10.1134/s1064226918090267

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Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

Autor: N. I. Iakovleva, A. V. Nikonov

Publikováno v: Journal of Communications Technology and Electronics. 63:277-280

The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5bbd330e974df334b1af0a6e265bc4d
https://doi.org/10.1134/s1064226918030142

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