Zobrazeno 1 - 10
of 14
pro vyhledávání: '"N Elgun"'
Autor:
N. Elgun, E.A. Davis
Publikováno v:
Journal of Non-Crystalline Solids. 330:226-233
Hydrogenated amorphous GaP films have been prepared by reactive rf sputtering. Infrared spectroscopy, optical transmission and reflection, photothermal deflection spectroscopy and dc conductivity have been studied to investigate the local bonding con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7316af5817a02aad48977d698259b4bc
https://doi.org/10.1016/s0022-3093(03)00531-3
https://doi.org/10.1016/s0022-3093(03)00531-3
Publikováno v:
Journal of Physics: Condensed Matter. 12:4723-4733
a-Ga1-xPx (0.5≤x≤1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31191155ce60d15f053c1d2276de6ae2
https://doi.org/10.1088/0953-8984/12/22/305
https://doi.org/10.1088/0953-8984/12/22/305
Publikováno v:
Journal of Physics: Condensed Matter. 8:1591-1605
Approximately stoichiometric InP films have been prepared over a range of substrate temperature . The structure of the deposited films has been investigated by means of transmission electron microscopy (TEM), extended x-ray absorption fine structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1714582eb5ad9f1dd97067789e78f079
https://doi.org/10.1088/0953-8984/8/10/028
https://doi.org/10.1088/0953-8984/8/10/028
Publikováno v:
Journal of Non-Crystalline Solids. 169:111-125
In 1− x P x films have been prepared by rf sputtering with compositions in the range 0.4 x x > 0.5 but In-rich films contained crystallites. Extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy measurements indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f9c6fa770aa531e2751a7b7b4243ead
https://doi.org/10.1016/0022-3093(94)90230-5
https://doi.org/10.1016/0022-3093(94)90230-5
Autor:
E.A. Davis, N Elgun
Publikováno v:
Journal of Physics: Condensed Matter. 6:779-790
The electronic properties of a series of nearly stoichiometric sputtered a-GaP films have been investigated as a function of increasing deposition and annealing temperatures up to 270 degrees C. The optical absorption coefficient (10 cm-1< alpha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40845801447c316f3b0c729bc865b3cb
https://doi.org/10.1088/0953-8984/6/3/018
https://doi.org/10.1088/0953-8984/6/3/018
Publikováno v:
Journal of Physics: Condensed Matter. 5:519-534
Stoichiometric GaAs films have been prepared by RF sputtering over an appreciable range of substrate temperature Ts. The structural and optical properties of these films have been investigated by means of a variety of experimental techniques. Transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ba0d21e332b8169f533e6a493e2d71
https://doi.org/10.1088/0953-8984/5/5/003
https://doi.org/10.1088/0953-8984/5/5/003
Publikováno v:
Journal of Physics: Condensed Matter. 4:7759-7772
A series of nearly stoichiometric a-GaP films has been prepared by RF sputtering on to substrates held at temperatures from 20-200 degrees C. Extended X-ray fine absorption (EXAFS) at both the Ga and P K edges, infrared absorption, and optical edge d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d52cbf7ff1635232673bb7e63bc86b
https://doi.org/10.1088/0953-8984/4/38/009
https://doi.org/10.1088/0953-8984/4/38/009
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