Zobrazeno 1 - 10
of 14
pro vyhledávání: '"N B Zvonkov"'
Autor:
Alexander Biryukov, Vl. V. Kocharovsky, V. Ya. Aleshkin, K. V. Maremynin, S. M. Nekorkin, B. N. Zvonkov, N. B. Zvonkov, V. I. Gavrilenko, A. A. Afonenko, S. V. Morozov, Alexander A. Dubinov
Publikováno v:
Acta Physica Polonica A. 107:7-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65434b15afdb2608c8f285eadceca3fc
https://doi.org/10.12693/aphyspola.107.7
https://doi.org/10.12693/aphyspola.107.7
Publikováno v:
Semiconductors. 35:1203-1207
The nonlinear generation of a difference mode in an injection laser is considered. A new design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate two laser modes with a wavelength of about 1 µm and a difference mode at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee8d6f9859c63513bc0e895a55b98d7
https://doi.org/10.1134/1.1410665
https://doi.org/10.1134/1.1410665
Autor:
Z. F. Krasilnik, N. B. Zvonkov, Dmitry G. Revin, Aleksandr A Andronov, E. A. Uskova, D. M. Gaponova, A. V. Antonov, V. Ya. Aleshkin, V. I. Gavrilenko
Publikováno v:
Semiconductor Science and Technology. 15:1049-1053
The light transmittance modulation by an electric field near the fundamental edge absorption has been measured in a p-type In0.21Ga0.79As/GaAs quantum well (QW) heterostructure at 4.2 K. The hole distribution function modulations were calculated usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a13cc3a65900dfa287a7d514ef37858
https://doi.org/10.1088/0268-1242/15/11/307
https://doi.org/10.1088/0268-1242/15/11/307
Autor:
E. A. Uskova, N. A. Bekin, N. B. Zvonkov, V. Ya. Aleshkin, Dmitry G. Revin, B. N. Zvonkov, Wojciech Knap, Aleksandr A Andronov, A. V. Gavrilenko, Czeslaw Skierbiszewski, A. V. Antonov, V. I. Gavrilenko, J. Lusakowski
Publikováno v:
Materials Science Forum. :261-264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5fe8fc01e78c50f97274d2d7888d0a
https://doi.org/10.4028/www.scientific.net/msf.297-298.261
https://doi.org/10.4028/www.scientific.net/msf.297-298.261
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 68:91-96
A new method of obtaining quantum-size GaAs1−x Sbx (x⩽0.45) layers is proposed. The method consists in laser vaporization of solid metallic antimony near the substrate directly in the reactor. The antimony concentration is set by the antimony spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27c49a52376333cac365d03a8aee550a
https://doi.org/10.1134/1.567826
https://doi.org/10.1134/1.567826
Autor:
G. A. Maksimov, E A Uskova, N B Zvonkov, B. N. Zvonkov, I. G. Malkina, I A Avrutskii, Evgenii M Dianov
Publikováno v:
Quantum Electronics. 27:118-121
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1df8b6336dc9a4d9310cba3344efde1
https://doi.org/10.1070/qe1997v027n02abeh000891
https://doi.org/10.1070/qe1997v027n02abeh000891
Autor:
T. N. Yan'kova, I. G. Malkina, Evgenii M Dianov, B. N. Zvonkov, I A Avrutskii, G. A. Maksimov, L V Medvedeva, L M Batukova, N B Zvonkov
Publikováno v:
Quantum Electronics. 24:859-862
InGaP/GaAs/InGaAs heterostructures were grown by MOCVD hydride epitaxy at atmospheric pressure. They were used in injection semiconductor lasers emitting at 0.92–1.02 μm. The output power of one cleaved facet was up to 750 mW when the width of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::567ee496f546201c1f5328e6213f34d3
https://doi.org/10.1070/qe1994v024n10abeh000194
https://doi.org/10.1070/qe1994v024n10abeh000194
Autor:
E. M. Dianov, A. B. Chigineva, Yu. I. Chigirinskii, G. A. Maksimov, N B Zvonkov, O. N. Gorshkov, A. P. Kasatkin, V. F. Lebedev
Publikováno v:
Technical Physics Letters. 27:709-711
It was found that the room-temperature photoluminescence (PL) spectra of Cr4+:Ca2GeO4 single crystal films grown by magnetron sputtering on Ca2GeO4 bulk single crystal substrates exhibit a sharp emission band in the region of ∼1.17 μm with satelli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b2cbb3d946b2271e6a2969dca939fa
https://doi.org/10.1134/1.1405235
https://doi.org/10.1134/1.1405235
Publikováno v:
Scopus-Elsevier
A semiconductor laser based on a new design of the InGaAs/GaAs/InGaP structure was developed and investigated experimentally. The radiation from this laser was coupled out through the substrate, which ensured a narrow angular distribution in a plane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf86d1a1f1dd1279e4715602a28cbe11
https://doi.org/10.1070/qe1998v028n07abeh001287
https://doi.org/10.1070/qe1998v028n07abeh001287
Autor:
Sergey V. Morozov, V. Ya. Aleshkin, Alexander Biryukov, Alexey Belyanin, N. B. Zvonkov, Marlan O. Scully, V. I. Gavrilenko, Vitaly Kocharovsky, Vl. V. Kocharovsky, K.V. Maremjanin, S. M. Nekorkin
Publikováno v:
Proceedings of CAOL 2005. Second International Conference on Advanced Optoelectronics and Lasers, 2005..
Summary form only given. The new design of the nonlinear mixing heterolasers, Butt-Joint Laser, where two butt-joined laser diodes are optically coupled but injection pumped separately, are presented. Two diode lasers operate at slightly different fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dfb90e2a02182ee50b911a6a14533a0
https://doi.org/10.1109/caol.2005.1553874
https://doi.org/10.1109/caol.2005.1553874