Zobrazeno 1 - 10
of 72
pro vyhledávání: '"N Bécourt"'
Autor:
N. Bécourt-Lhote, Jean Marie Girard, N. Rogez, A. Dekeyne, N. Ribeiro-Palha, Nancy Claude, Véronique Gervais
Publikováno v:
Toxicology Letters. 295:S111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d384bfb175e949394a11a37d53671bd
https://doi.org/10.1016/j.toxlet.2018.06.639
https://doi.org/10.1016/j.toxlet.2018.06.639
Autor:
L. Rutault, B. Postic, H. Aerts, A. Perrier, N. Bécourt-Lhote, M. Martins, N. Claude, A. Buvat
Publikováno v:
Toxicology Letters. 295:S110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f366d9a71680af51aa9a1920325075d
https://doi.org/10.1016/j.toxlet.2018.06.635
https://doi.org/10.1016/j.toxlet.2018.06.635
Akademický článek
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Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates
Autor:
Francesca Peiró, A. Cornet, K Harteros, George Deligeorgis, G. Halkias, Alexandros Georgakilas, M. Androulidaki, C Michelakis, M. Calamiotou, N Bécourt
Publikováno v:
Materials Science and Engineering: B. 66:181-184
The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe495f3893e3dd98ad60fc7f3d1e1be
https://doi.org/10.1016/s0921-5107(99)00104-x
https://doi.org/10.1016/s0921-5107(99)00104-x
Autor:
E Macarona, N Chrysanthakopoulos, Maria Kayambaki, A. Cornet, Francesca Peiró, Katerina Tsagaraki, Zacharias Hatzopoulos, K Michelakis, M. Calamiotou, N Bécourt, Anna Vilà, Alexandros Georgakilas
Publikováno v:
Journal of Crystal Growth. :248-251
InAlAs layers and InGaAs/InAlAs quantum well heterostructures, grown by molecular beam epitaxy on vicinal (1 1 1)B InP substrates, exhibited extensive surface step bunching, compositional inhomogeneities and degraded crystalline quality, with variati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46eb6fe709f2c0b5942b1be01d2f495e
https://doi.org/10.1016/s0022-0248(98)01331-1
https://doi.org/10.1016/s0022-0248(98)01331-1
Autor:
F. Peiró, A. Cornet, N Chrysanthakopoulos, M. Calamiotou, K Harteros, Katerina Tsagaraki, N Bécourt, Anna Vilà, Alexandros Georgakilas, Zacharias Hatzopoulos
Publikováno v:
Thin Solid Films. 336:218-221
The MBE growth of InAlAs layers on vicinal (111)BInP substrates, misoriented by 1° toward [ 2 11], has been investigated. Scanning electron microscopy and atomic force microscopy revealed a dependence of InAlAs surface morphology on the layer’s st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b1bfaa7453b86b1b913861aea7a03bd
https://doi.org/10.1016/s0040-6090(98)01280-2
https://doi.org/10.1016/s0040-6090(98)01280-2
Autor:
A. Cornet, Morante, Francesca Peiró, Alexandros Georgakilas, G. Halkias, N Bécourt, J. C. Ferrer, K. Michelakis, Pau Gorostiza
Publikováno v:
Materials Science Forum. :1211-1216
We have examined the structure of InGaAs and InAlAs strained monolayers grown by Molecular Beam Epitaxy on (111)B 1° off toward [211] InP substrates. Transmission Electron Microscopy and Atomic Force Microscopy observations have revealed the bunchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c8670f8e719c9be5aeca0b5f9bb700
https://doi.org/10.4028/www.scientific.net/msf.258-263.1211
https://doi.org/10.4028/www.scientific.net/msf.258-263.1211
Autor:
J. Stoemenos, J. Camassel, Konstantinos Zekentes, N. Bécourt, J. Pascual, Katerina Tsagaraki, Jean-Marie Bluet, Maria Androulidaki
Publikováno v:
Applied Surface Science. 102:22-27
The growth of β-SiC films on Si(100) substrates using C 2 H 2 gas and Si solid sources in a molecular beam epitaxy system has been investigated. Different C 2 H 2 and Si fluxes as well as different substrate temperatures have been used. The growth w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37e7c4ff545f0bd1d0cc83947ed11ff
https://doi.org/10.1016/0169-4332(96)00012-8
https://doi.org/10.1016/0169-4332(96)00012-8
Publikováno v:
Surface Science. 339:363-371
We have measured photoelectron diffraction polar profiles for a β-SiC film grown epitaxially on Si(001). Tha data reveal dominant single domain growth with a good crystallinity but the C 1s and Si 2p profiles exhibit remarkably strong differences in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f74842cf394bc1251bd69b7c55ab4c79
https://doi.org/10.1016/0039-6028(95)00676-1
https://doi.org/10.1016/0039-6028(95)00676-1
Publikováno v:
Applied Surface Science. 68:461-466
Buffer layers of SiC for heteroepitaxy of SiC were grown on Si(100) substrates by pyrolysis of C 3 H 8 diluted in H 2 as carrier gas, at atmospheric pressure. The composition profile and the interphase morphology have been studied by AES, TEM (XTEM,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f549c93e6a2d137af6b7a46bba1dbac
https://doi.org/10.1016/0169-4332(93)90227-3
https://doi.org/10.1016/0169-4332(93)90227-3